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Initial commit: component/ir2104

Ray ·1e1af88574 ·
2 files changed +89
README.mdadded+53
@@ -0,0 +1,53 @@+# IR2104++**Infineon** · Gate Driver · SOIC-8++The IR2104 is a 600 V half-bridge gate driver for MOSFETs and IGBTs. A single logic input (with a separate shutdown) drives both the high-side and low-side outputs with matched propagation delay and internal dead time, using a bootstrap capacitor to supply the floating high-side gate. It is used in motor drives, DC-DC converters, and class-D stages.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | VCC | power_in | Low-side and logic fixed supply. Recommended operating range 10 V to 20 V (abs max 25 V). Undervoltage lockout thresholds VCCUV+ 8.9 V typ / VCCUV- 8.2 V typ. Quiescent supply current IQCC 150 µA typ. |+| 2 | IN | input | Logic input for high- and low-side gate driver outputs (HO and LO), in phase with HO. CMOS/LSTTL compatible down to 3.3 V logic. VIH ≥ 3 V, VIL ≤ 0.8 V (over VCC = 10-20 V). Input bias IIN+ 3 µA typ at VIN = 5 V. |+| 3 | /SD | input | Active-low shutdown input; when asserted turns off both HO and LO outputs. Shutdown propagation delay tsd 160 ns typ. VSD,TH+ ≥ 3 V, VSD,TH- ≤ 0.8 V. Referenced to COM. |+| 4 | COM | power_in | Low-side return / logic ground. Reference for VCC, IN, /SD, and LO. All voltage parameters in the datasheet are referenced to COM. |+| 5 | LO | output | Low-side gate drive output, referenced to COM. Drives the gate of the low-side N-channel MOSFET/IGBT. Peak source/sink 130 mA / 270 mA. Turn-on/off propagation delays 680 ns / 150 ns typ. |+| 6 | VS | power_in | High-side floating supply return; connect to the source of the high-side MOSFET (switch node). Tolerates negative transients; operational for VS -5 V to +600 V. Reference for HO and VB. |+| 7 | HO | output | High-side gate drive output, referenced to VS. Drives the gate of the high-side N-channel MOSFET/IGBT. In phase with IN. Peak source/sink 130 mA / 270 mA. Swings between VS and VB. |+| 8 | VB | power_in | High-side floating supply (bootstrap). Connect a bootstrap capacitor between VB and VS, charged from VCC through a bootstrap diode. Recommended VB = VS+10 V to VS+20 V, absolute max 625 V. |++## Key specifications++| Parameter | Value |+|---|---|+| Type | 600 V half-bridge gate driver |+| Output current | 210 mA source / 360 mA sink |+| Offset voltage | Up to 600 V (high side) |+| Inputs | Single IN + active-low shutdown |+| Dead time | Internal (~520 ns) |+| Supply voltage | 10 V to 20 V |+| Operating temperature | -40 C to 125 C |++## Ordering variants++- `IR2104`+- `IR2104PbF`+- `IR2104S`+- `IR2104SPbF`++## CAD (KiCad official)++- Symbol: `ir2104.kicad_sym`+- Footprint: `ir2104.kicad_mod`+- 3D model: SOIC-8 body from KiCad `Package_SO/SOIC-8_3.9x4.9mm_P1.27mm`.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Infineon datasheet](https://www.infineon.com/assets/row/public/documents/24/49/infineon-ir2104-datasheet-en.pdf) (14 pp, sha256 `3b7877fc162f31e4`, retrieved 2026-08-17, tier: manufacturer)+- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/ir2104-datasheet.pdf)
page.jsonadded+36
@@ -0,0 +1,36 @@+{+  "slug": "ir2104",+  "version": "0.1.0",+  "type": "component",+  "description": "600 V half-bridge MOSFET/IGBT gate driver with a single input and shutdown.",+  "tags": [+    "gate-driver",+    "half-bridge",+    "high-side",+    "bootstrap",+    "infineon",+    "soic-8"+  ],+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "ir2104.kicad_sym",+    "ir2104.kicad_mod",+    "ir2104.glb",+    "ir2104.step",+    "docs/hero.png",+    "docs/ir2104-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html"+  ],+  "visibility": "public",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  }+}\ No newline at end of file