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IPG20N06S4L-26-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8(5x6). Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+10−7@@ -32,31 +32,31 @@ "number": "1", "name": "S1", "type": "passive",- "description": "Source of MOSFET #1. Reference terminal for VGS1 and current return for channel 1 (rated up to 50 A continuous @ TC=25 \u00b0C)."+ "description": "Source of MOSFET #1. Reference terminal for VGS1 and current return for channel 1 (rated up to 50 A continuous @ TC=25 °C)." }, { "number": "2", "name": "G1", "type": "input",- "description": "Gate of MOSFET #1. VGS(th)=1.0-2.5 V, VGSS max \u00b120 V, drive at VGS=10 V for full enhancement (RDS(on) typ 11 m\u03a9)."+ "description": "Gate of MOSFET #1. VGS(th)=1.0-2.5 V, VGSS max ±20 V, drive at VGS=10 V for full enhancement (RDS(on) typ 11 mΩ)." }, { "number": "3", "name": "S2", "type": "passive",- "description": "Source of MOSFET #2. Reference terminal for VGS2 and current return for channel 2 (rated up to 50 A continuous @ TC=25 \u00b0C)."+ "description": "Source of MOSFET #2. Reference terminal for VGS2 and current return for channel 2 (rated up to 50 A continuous @ TC=25 °C)." }, { "number": "4", "name": "G2", "type": "input",- "description": "Gate of MOSFET #2. VGS(th)=1.0-2.5 V, VGSS max \u00b120 V, drive at VGS=10 V for full enhancement (RDS(on) typ 11 m\u03a9)."+ "description": "Gate of MOSFET #2. VGS(th)=1.0-2.5 V, VGSS max ±20 V, drive at VGS=10 V for full enhancement (RDS(on) typ 11 mΩ)." }, { "number": "5", "name": "D2", "type": "passive",- "description": "Drain of MOSFET #2 (shared pad with pin 6, forms the thermal/current-carrying tab). VDSS=60 V, ID=50 A. Body diode VSD \u2264 1.2 V @ 30 A."+ "description": "Drain of MOSFET #2 (shared pad with pin 6, forms the thermal/current-carrying tab). VDSS=60 V, ID=50 A. Body diode VSD ≤ 1.2 V @ 30 A." }, { "number": "6",@@ -68,7 +68,7 @@ "number": "7", "name": "D1", "type": "passive",- "description": "Drain of MOSFET #1 (shared pad with pin 8, forms the thermal/current-carrying tab). VDSS=60 V, ID=50 A. Body diode VSD \u2264 1.2 V @ 30 A."+ "description": "Drain of MOSFET #1 (shared pad with pin 8, forms the thermal/current-carrying tab). VDSS=60 V, ID=50 A. Body diode VSD ≤ 1.2 V @ 30 A." }, { "number": "8",@@ -144,5 +144,8 @@ "docs/ipg20n06s4l-26-hxy-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }