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ipd50n04s4l-08-vb: factory component page (tier=lcsc)

Ray ·ffe322f709 ·2mo ago ·parent 34ae873
1 file changed +98−8
page.json+98−8
@@ -1,13 +1,108 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "ipd50n04s4l-08-vb",+  "title": "IPD50N04S4L-08-VB",+  "brief": "VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "ipd50n04s4l-08-vb"   ],+  "component": {+    "mpn": "IPD50N04S4L-08-VB",+    "manufacturer": "VBsemi Elec",+    "package": "TO-252",+    "pin_count": 4,+    "category": "Transistors/Thyristors",+    "subcategory": "MOSFETs",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603003006589673472",+    "parts": {+      "symbol": "ipd50n04s4l-08-vb.kicad_sym",+      "footprint": "ipd50n04s4l-08-vb.kicad_mod",+      "model_3d": "ipd50n04s4l-08-vb.glb",+      "model_3d_step": "ipd50n04s4l-08-vb.step",+      "lbr": "ipd50n04s4l-08-vb.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate. Control terminal of the N-channel MOSFET. VGS(th) = 1.2 V to 2.5 V (ID = 250 \u00b5A, VDS = VGS); VGS absolute maximum = \u00b125 V. Typical gate resistance Rg = 0.85 \u03a9 @ 1 MHz."+      },+      {+        "number": "2",+        "name": "D",+        "type": "passive",+        "description": "Drain. Also electrically connected to the exposed tab of the TO-252 package. VDS absolute maximum = 40 V; continuous ID = 85 A at TC = 25 \u00b0C; RDS(on) = 5.0 m\u03a9 typical @ VGS = 10 V, ID = 30 A. Body diode cathode."+      },+      {+        "number": "3",+        "name": "S",+        "type": "passive",+        "description": "Source. Return terminal for drain current. Body diode anode; continuous source-drain diode current IS = 110 A at TC = 25 \u00b0C, VSD \u2248 0.8 V typical at IS = 20 A."+      },+      {+        "number": "4",+        "name": "D",+        "type": "passive",+        "description": "Drain (exposed thermal tab of the TO-252 package). Electrically the same node as pin 2; provides the primary thermal path with RthJC = 0.33 \u00b0C/W typical."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603003006589673472",+        "pages": null,+        "sha256": "a9740dc12dc1f9b3",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 4,+        "described": 4,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "VBsemi Elec",+      "Package": "TO-252",+      "Category": "Transistors/Thyristors",+      "Pins": "4"+    }+  },+  "variants": [+    {+      "mpn": "IPD50N04S4L-08-VB",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "ipd50n04s4l-08-vb"+  ],+  "discovery_pitch": "IPD50N04S4L-08-VB (VBsemi Elec) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +120,5 @@     "docs/ipd50n04s4l-08-vb-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file