IPD50N04S4L-08-VB

@@ -0,0 +1,45 @@+# IPD50N04S4L-08-VB++**VBsemi Elec** · MOSFETs · TO-252++IPD50N04S4L-08-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate. Control terminal of the N-channel MOSFET. VGS(th) = 1.2 V to 2.5 V (ID = 250 µA, VDS = VGS); VGS absolute maximum = ±25 V. Typical gate resistance Rg = 0.85 Ω @ 1 MHz. |+| 2 | D | passive | Drain. Also electrically connected to the exposed tab of the TO-252 package. VDS absolute maximum = 40 V; continuous ID = 85 A at TC = 25 °C; RDS(on) = 5.0 mΩ typical @ VGS = 10 V, ID = 30 A. Body diode cathode. |+| 3 | S | passive | Source. Return terminal for drain current. Body diode anode; continuous source-drain diode current IS = 110 A at TC = 25 °C, VSD ≈ 0.8 V typical at IS = 20 A. |+| 4 | D | passive | Drain (exposed thermal tab of the TO-252 package). Electrically the same node as pin 2; provides the primary thermal path with RthJC = 0.33 °C/W typical. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | VBsemi Elec |+| Package | TO-252 |+| Category | Transistors/Thyristors |+| Pins | 4 |++## Ordering variants++Same part, different packaging or reel option.++- `IPD50N04S4L-08-VB`++## CAD (KiCad official)++- Symbol: `IPD50N04S4L-08-VB`+- Footprint: `Package_TO_SOT_SMD:TO-252-2`+- 3D model: TO-252 (KiCad packages3D, STEP)++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603003006589673472) (None pp, sha256 `a9740dc12dc1f9b3`, retrieved 2026-08-17, tier: lcsc)+- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/ipd50n04s4l-08-vb-datasheet.pdf)

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