IKW08T120

@@ -0,0 +1,38 @@+# IKW08T120++**Infineon Technologies** · IGBT Transistors / Modules · TO-247-3++IKW08T120 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate. Insulated gate terminal that controls collector-emitter conduction. VGE(th) typ 5.8 V; absolute maximum VGE = +/-20 V. Drive with a series gate resistor (datasheet characterization uses RG = 81 ohm). |+| 2 | C | passive | Collector. High-voltage power terminal; blocks up to VCES = 1200 V. Rated DC IC = 16 A at TC = 25 degC (8 A at TC = 100 degC), pulsed IC,puls = 24 A. Also the cathode of the anti-parallel emitter-controlled HE diode. |+| 3 | E | passive | Emitter. Power-return terminal referenced to the gate drive. Also the anode of the anti-parallel emitter-controlled HE diode (IF up to 16 A at TC = 25 degC, VF typ 1.7 V). |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Infineon Technologies |+| Package | TO-247-3 |+| Category | Transistors/Thyristors |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `IKW08T120`+- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`+- 3D model: TO-247-3 (KiCad packages3D, STEP)++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894872237850624) (16 pp, sha256 `b46bd00f17bbc5e5`, retrieved 2026-08-17, tier: lcsc)+- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/ikw08t120-datasheet.pdf)

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