component
IKP10N60T
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-220-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+87−8@@ -1,13 +1,97 @@ {+ "schema_version": 1,+ "type": "component", "slug": "ikp10n60t",+ "title": "IKP10N60T",+ "brief": "Infineon Technologies IGBT Transistors / Modules, TO-220-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "Infineon Technologies IGBT Transistors / Modules, TO-220-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "ikp10n60t" ],+ "component": {+ "mpn": "IKP10N60T",+ "manufacturer": "Infineon Technologies",+ "package": "TO-220-3",+ "pin_count": 3,+ "category": "Transistors/Thyristors",+ "subcategory": "IGBT Transistors / Modules",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894639772610560",+ "parts": {+ "symbol": "ikp10n60t.kicad_sym",+ "footprint": "ikp10n60t.kicad_mod",+ "model_3d": "ikp10n60t.glb",+ "model_3d_step": "ikp10n60t.step",+ "lbr": "ikp10n60t.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "G",+ "type": "input",+ "description": "Gate. Insulated gate control terminal for the IGBT. V_GE threshold typ. 4.6V (min 4.1V, max 5.7V at I_C=0.3mA); absolute maximum V_GE = \u00b120V. Drive with V_GE = 15V for full enhancement (V_CE(sat) ~1.5V typ. at I_C=10A)."+ },+ {+ "number": "2",+ "name": "C",+ "type": "passive",+ "description": "Collector. High-voltage power terminal of the IGBT and cathode of the co-packaged anti-parallel Emitter Controlled HE freewheeling diode. V_CES = 600V; DC I_C = 24A @ T_C=25\u00b0C (18A @ 100\u00b0C); pulsed I_Cpuls = 30A. Electrically connected to the metal mounting tab of the TO-220 package."+ },+ {+ "number": "3",+ "name": "E",+ "type": "passive",+ "description": "Emitter. Low-side power terminal of the IGBT and anode of the co-packaged anti-parallel freewheeling diode; also the reference for the gate drive (V_GE). Diode forward current I_F = 24A DC @ T_C=25\u00b0C (18A @ 100\u00b0C), V_F typ. 1.6V."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894639772610560",+ "pages": 13,+ "sha256": "e7ca7e4b662ce6e3",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 3,+ "described": 3,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "Infineon Technologies",+ "Package": "TO-220-3",+ "Category": "Transistors/Thyristors",+ "Pins": "3"+ }+ },+ "variants": [],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "ikp10n60t"+ ],+ "discovery_pitch": "IKP10N60T (Infineon Technologies) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +109,5 @@ "docs/ikp10n60t-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }