IHW15N120R3

@@ -0,0 +1,38 @@+# IHW15N120R3++**Infineon Technologies** · IGBT Transistors / Modules · TO-247-3++IHW15N120R3 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate. Voltage-controlled input for switching the IGBT. VGE(th) typ 5.8V; VGE absolute max ±20V (transient ±25V). Left-most lead when viewed from the front of the TO-247-3 package (leads down). |+| 2 | C | passive | Collector. High-voltage power terminal of the IGBT and cathode of the monolithic body diode. VCE max 1200V; IC 15A at Tc=100°C (30A at Tc=25°C). Electrically connected to the metal mounting tab. |+| 3 | E | passive | Emitter. Low-side power terminal of the IGBT and anode of the monolithic body diode. Gate-emitter voltage is the drive reference (VGE). Internal emitter inductance ~13 nH measured 5mm from case. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Infineon Technologies |+| Package | TO-247-3 |+| Category | Transistors/Thyristors |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `IHW15N120R3`+- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`+- 3D model: TO-247-3 (KiCad packages3D, STEP)++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894818650611712) (15 pp, sha256 `0919db278d0afb11`, retrieved 2026-08-17, tier: lcsc)+- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/ihw15n120r3-datasheet.pdf)

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