component
HYG038N03LR1D
Public Made by Adomby adom
HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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hyg038n03lr1d: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+288−1
README.md+28@@ -21,6 +21,34 @@ HYG038N03LR1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | 30 | V | | 2 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |+| Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 2 |+| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 2 |+| Source Current-Continuous (Body Diode) | IS | | | 78 | A | Tc=25℃; mounted on large heat sink | 2 |+| Pulsed Drain Current | IDM | | | 260 | A | Tc=25℃; repetitive rating, pulse width limited by max junction temperature | 2 |+| Continuous Drain Current | ID | | | 78 | A | Tc=25℃ | 2 |+| Continuous Drain Current | ID | | | 55 | A | Tc=100℃ | 2 |+| Maximum Power Dissipation | PD | | | 47 | W | Tc=25℃ | 2 |+| Maximum Power Dissipation | PD | | | 23.5 | W | Tc=100℃ | 2 |+| Thermal Resistance, Junction-to-Case | RJC | | | 3.2 | ℃/W | | 2 |+| Thermal Resistance, Junction-to-Ambient | RJA | | | 60 | ℃/W | Surface mounted on FR-4 board | 2 |+| Single Pulsed-Avalanche Energy | EAS | | | 122 | mJ | L=0.3mH | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V,IDS=250μA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 50 | μA | TJ=125℃ | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 3 | V | VDS=VGS, IDS=250μA | 2 |+| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 3.5 | 4.2 | mΩ | VGS=10V,IDS=20A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 4.9 | 6.3 | mΩ | VGS=4.5V,IDS=20A | 2 |+| Diode Forward Voltage | VSD | | 0.83 | 1.2 | V | ISD=20A,VGS=0V | 2 |+ ## CAD (KiCad official) - Symbol: `HYG038N03LR1D`
page.json+260−1@@ -148,6 +148,265 @@ "Package": "TO-252-2L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "9d295da77c4629c7",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source Current-Continuous (Body Diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 78,+ "conditions": "Tc=25℃; mounted on large heat sink",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "Tc=25℃; repetitive rating, pulse width limited by max junction temperature",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 78,+ "conditions": "Tc=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 55,+ "conditions": "Tc=100℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 47,+ "conditions": "Tc=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 23.5,+ "conditions": "Tc=100℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 3.2,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Surface mounted on FR-4 board",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulsed-Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 122,+ "conditions": "L=0.3mH",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V,IDS=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=30V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "TJ=125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.8,+ "max": 3,+ "conditions": "VDS=VGS, IDS=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 3.5,+ "max": 4.2,+ "conditions": "VGS=10V,IDS=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 4.9,+ "max": 6.3,+ "conditions": "VGS=4.5V,IDS=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.83,+ "max": 1.2,+ "conditions": "ISD=20A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +448,4 @@ "visibility": { "public": true }-}+}