component
HY3010D
Public Made by Adomby adom
HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
hy3010d: specified limits as data (metadata.characteristics, 33 rows from the datasheet)
2 files changed
+444−1
README.md+40@@ -21,6 +21,46 @@ HY3010D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from t | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | 100 | V | | 2 |+| Gate-Source Voltage | VGSS | -25 | | 25 | V | | 2 |+| Maximum Junction Temperature | TJ | | | 175 | °C | | 2 |+| Storage Temperature Range | TSTG | -55 | | 175 | °C | | 2 |+| Source Current-Continuous (Body Diode) | IS | | | 60 | A | Tc=25°C | 2 |+| Pulsed Drain Current | IDM | | | 228 | A | Tc=25°C | 2 |+| Continuous Drain Current | ID | | | 60 | A | Tc=25°C | 2 |+| Continuous Drain Current | ID | | | 45 | A | Tc=100°C | 2 |+| Maximum Power Dissipation | PD | | | 65 | W | Tc=25°C | 2 |+| Maximum Power Dissipation | PD | | | 33 | W | Tc=100°C | 2 |+| Thermal Resistance, Junction-to-Case | RJC | | | 2.3 | °C/W | | 2 |+| Thermal Resistance, Junction-to-Ambient | RJA | | | 110 | °C/W | Surface mounted on 1in2 FR-4 board | 2 |+| Single Pulsed-Avalanche Energy | EAS | | | 355 | mJ | L=0.5mH, starting TJ=25°C, VDS=80V, VGS=10V | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V,IDS=250μA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VDS=68V,VGS=0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 5 | μA | TJ=125°C | 2 |+| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, IDS=250μA | 2 |+| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±25V,VDS=0V | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 10 | 12 | mΩ | VGS=10V,IDS=30A | 2 |+| Diode Forward Voltage | VSD | | 0.9 | 1.2 | V | ISD=30A,VGS=0V | 2 |+| Reverse Recovery Time | trr | | 30 | | ns | ISD=30A,dISD/dt=100A/μs | 2 |+| Reverse Recovery Charge | Qrr | | 50 | | nC | | 2 |+| Gate Resistance | RG | | 1.14 | | Ω | VGS=0V,VDS=0V,F=1MHz | 3 |+| Input Capacitance | Ciss | | 3197 | | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 |+| Output Capacitance | Coss | | 361 | | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 |+| Reverse Transfer Capacitance | Crss | | 230 | | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 |+| Turn-on Delay Time | td(ON) | | 19 | | ns | VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V | 3 |+| Turn-on Rise Time | Tr | | 50 | | ns | VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V | 3 |+| Turn-off Delay Time | td(OFF) | | 62 | | ns | VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V | 3 |+| Turn-off Fall Time | Tf | | 68 | | ns | VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V | 3 |+| Total Gate Charge | Qg | | 81 | | nC | VDS=80V, VGS=10V, IDs=30A | 3 |+| Gate-Source Charge | Qgs | | 13 | | nC | VDS=80V, VGS=10V, IDs=30A | 3 |+| Gate-Drain Charge | Qgd | | 26 | | nC | VDS=80V, VGS=10V, IDs=30A | 3 |+ ## CAD (KiCad official) - Symbol: `HY3010D`
page.json+404−1@@ -148,6 +148,409 @@ "Package": "TO-252-2L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "30a03b3a76a941fe",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source Current-Continuous (Body Diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 228,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "Tc=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 65,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 33,+ "conditions": "Tc=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2.3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "Surface mounted on 1in2 FR-4 board",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulsed-Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 355,+ "conditions": "L=0.5mH, starting TJ=25°C, VDS=80V, VGS=10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V,IDS=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=68V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "TJ=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": 3,+ "max": 4,+ "conditions": "VDS=VGS, IDS=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±25V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 10,+ "max": 12,+ "conditions": "VGS=10V,IDS=30A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.9,+ "max": 1.2,+ "conditions": "ISD=30A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 30,+ "max": null,+ "conditions": "ISD=30A,dISD/dt=100A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.14,+ "max": null,+ "conditions": "VGS=0V,VDS=0V,F=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 3197,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, Frequency=1.0MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 361,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, Frequency=1.0MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 230,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, Frequency=1.0MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Delay Time",+ "symbol": "td(ON)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 19,+ "max": null,+ "conditions": "VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Rise Time",+ "symbol": "Tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off Delay Time",+ "symbol": "td(OFF)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 62,+ "max": null,+ "conditions": "VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off Fall Time",+ "symbol": "Tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 68,+ "max": null,+ "conditions": "VDD=50V,RG=3.3Ω,IDS=30A,VGS=10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 81,+ "max": null,+ "conditions": "VDS=80V, VGS=10V, IDs=30A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 13,+ "max": null,+ "conditions": "VDS=80V, VGS=10V, IDs=30A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 26,+ "max": null,+ "conditions": "VDS=80V, VGS=10V, IDs=30A",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +592,4 @@ "visibility": { "public": true }-}+}