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Set visibility: public

Ray ·87b6aab461 · ·parent 7e7bed2
1 file changed +8−5
page.json+8−5
@@ -32,19 +32,19 @@         "number": "1",         "name": "OD",         "type": "output",-        "description": "Discharge-control MOSFET gate drive output. Drives the external N-MOSFET (M1) that gates the discharge current path. Output HIGH (V_DH \u2265 VDD-0.1V) enables discharge; output LOW (V_DL \u2264 0.5V) during overdischarge or discharge overcurrent disables it."+        "description": "Discharge-control MOSFET gate drive output. Drives the external N-MOSFET (M1) that gates the discharge current path. Output HIGH (V_DH ≥ VDD-0.1V) enables discharge; output LOW (V_DL ≤ 0.5V) during overdischarge or discharge overcurrent disables it."       },       {         "number": "2",         "name": "CS",         "type": "input",-        "description": "Overcurrent detection input and charger detection terminal. Senses the voltage across the two series N-MOSFETs (via R2, typ 2k\u03a9) to detect discharge overcurrent (V_DIP=150\u00b125mV), charge overcurrent (V_CIP=-100mV), and load short-circuit (V_SIP=0.85V). High-voltage tolerant: absolute maximum VDD-20V to VDD+0.3V (rated 20V for charger-reverse protection)."+        "description": "Overcurrent detection input and charger detection terminal. Senses the voltage across the two series N-MOSFETs (via R2, typ 2kΩ) to detect discharge overcurrent (V_DIP=150±25mV), charge overcurrent (V_CIP=-100mV), and load short-circuit (V_SIP=0.85V). High-voltage tolerant: absolute maximum VDD-20V to VDD+0.3V (rated 20V for charger-reverse protection)."       },       {         "number": "3",         "name": "OC",         "type": "output",-        "description": "Charge-control MOSFET gate drive output. Drives the external N-MOSFET (M2) that gates the charge current path. Output HIGH (V_CH \u2265 VDD-0.1V) enables charging; output LOW (V_CL \u2264 0.5V) during overcharge or charge overcurrent disables it. High-voltage tolerant: absolute maximum VDD-20V to VDD+0.3V."+        "description": "Charge-control MOSFET gate drive output. Drives the external N-MOSFET (M2) that gates the charge current path. Output HIGH (V_CH ≥ VDD-0.1V) enables charging; output LOW (V_CL ≤ 0.5V) during overcharge or charge overcurrent disables it. High-voltage tolerant: absolute maximum VDD-20V to VDD+0.3V."       },       {         "number": "4",@@ -56,7 +56,7 @@         "number": "5",         "name": "VDD",         "type": "power_in",-        "description": "Positive power supply input, connected to the battery positive terminal through R1 (typ 100\u03a9). Operating range 1.5V to 8V (V_DSOP1); absolute maximum VSS-0.3V to VSS+10V. Bypass to VSS with C1 (typ 0.1\u03bcF, min 0.01\u03bcF)."+        "description": "Positive power supply input, connected to the battery positive terminal through R1 (typ 100Ω). Operating range 1.5V to 8V (V_DSOP1); absolute maximum VSS-0.3V to VSS+10V. Bypass to VSS with C1 (typ 0.1μF, min 0.01μF)."       },       {         "number": "6",@@ -126,5 +126,8 @@     "docs/hy2111-gb-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file