component
HY2111-GB
Public Made by Adomby adom
HYCON Tech Battery Management, SOT-23-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
← Commit history
orderable attributes: rebuild .lbr with adom-lbr 2.18.0 so MPN, MANUFACTURER and the distributor part numbers reach <technology> (LCSC_PN C82747). The published library carried no attributes at all, so a BOM had nothing to buy from. Distributor PNs matched on exact MPN AND corroborating manufacturer.
2 files changed
+27−7
hy2111-gb.lbr+20−2@@ -60,6 +60,18 @@ <smd name="4" x="1.1375" y="-0.9500" dx="1.3250" dy="0.6000" layer="1"/> <smd name="5" x="1.1375" y="-0.0000" dx="1.3250" dy="0.6000" layer="1"/> <smd name="6" x="1.1375" y="0.9500" dx="1.3250" dy="0.6000" layer="1"/>+ <polygon width="0.1200" layer="21">+ <vertex x="-1.4500" y="1.5100"/>+ <vertex x="-1.6900" y="1.8400"/>+ <vertex x="-1.2100" y="1.8400"/>+ </polygon>+ <polygon width="0.1000" layer="51">+ <vertex x="-0.4000" y="1.4500"/>+ <vertex x="0.8000" y="1.4500"/>+ <vertex x="0.8000" y="-1.4500"/>+ <vertex x="-0.8000" y="-1.4500"/>+ <vertex x="-0.8000" y="1.0500"/>+ </polygon> <wire x1="-0.9100" y1="1.5600" x2="0.9100" y2="1.5600" width="0.1200" layer="21"/> <wire x1="-0.9100" y1="1.5100" x2="-0.9100" y2="1.5600" width="0.1200" layer="21"/> <wire x1="-0.9100" y1="-1.5600" x2="-0.9100" y2="-1.5100" width="0.1200" layer="21"/>@@ -68,7 +80,7 @@ <wire x1="0.9100" y1="-1.5600" x2="-0.9100" y2="-1.5600" width="0.1200" layer="21"/> <text x="0" y="2.212" size="1.27" layer="25" align="bottom-center">>NAME</text> <text x="0" y="-2.212" size="1.27" layer="27" align="top-center">>VALUE</text>-<!--adom-pin1--><polygon width="0.0500" layer="21"><vertex x="-1.4500" y="1.5100"/><vertex x="-1.6900" y="1.8400"/><vertex x="-1.2100" y="1.8400"/></polygon></package>+</package> </packages> <symbols> <symbol name="HY2111-GB">@@ -102,7 +114,13 @@ <connect gate="G$1" pin="VDD" pad="5"/> <connect gate="G$1" pin="NC" pad="4"/> </connects>- <technologies><technology name=""/></technologies>+ <technologies>+ <technology name="">+ <attribute name="MPN" value="HY2111-GB" constant="no"/>+ <attribute name="MANUFACTURER" value="HYCON Tech" constant="no"/>+ <attribute name="LCSC_PN" value="C82747" constant="no"/>+ </technology>+ </technologies> </device> </devices> </deviceset>
page.json+7−5@@ -26,25 +26,27 @@ "model_3d_step": "hy2111-gb.step", "lbr": "hy2111-gb.lbr" },- "distributor_links": {},+ "distributor_links": {+ "lcsc": "C82747"+ }, "pins": [ { "number": "1", "name": "OD", "type": "output",- "description": "Discharge-control MOSFET gate drive output. Drives the external N-MOSFET (M1) that gates the discharge current path. Output HIGH (V_DH ≥ VDD-0.1V) enables discharge; output LOW (V_DL ≤ 0.5V) during overdischarge or discharge overcurrent disables it."+ "description": "Discharge-control MOSFET gate drive output. Drives the external N-MOSFET (M1) that gates the discharge current path. Output HIGH (V_DH \u2265 VDD-0.1V) enables discharge; output LOW (V_DL \u2264 0.5V) during overdischarge or discharge overcurrent disables it." }, { "number": "2", "name": "CS", "type": "input",- "description": "Overcurrent detection input and charger detection terminal. Senses the voltage across the two series N-MOSFETs (via R2, typ 2kΩ) to detect discharge overcurrent (V_DIP=150±25mV), charge overcurrent (V_CIP=-100mV), and load short-circuit (V_SIP=0.85V). High-voltage tolerant: absolute maximum VDD-20V to VDD+0.3V (rated 20V for charger-reverse protection)."+ "description": "Overcurrent detection input and charger detection terminal. Senses the voltage across the two series N-MOSFETs (via R2, typ 2k\u03a9) to detect discharge overcurrent (V_DIP=150\u00b125mV), charge overcurrent (V_CIP=-100mV), and load short-circuit (V_SIP=0.85V). High-voltage tolerant: absolute maximum VDD-20V to VDD+0.3V (rated 20V for charger-reverse protection)." }, { "number": "3", "name": "OC", "type": "output",- "description": "Charge-control MOSFET gate drive output. Drives the external N-MOSFET (M2) that gates the charge current path. Output HIGH (V_CH ≥ VDD-0.1V) enables charging; output LOW (V_CL ≤ 0.5V) during overcharge or charge overcurrent disables it. High-voltage tolerant: absolute maximum VDD-20V to VDD+0.3V."+ "description": "Charge-control MOSFET gate drive output. Drives the external N-MOSFET (M2) that gates the charge current path. Output HIGH (V_CH \u2265 VDD-0.1V) enables charging; output LOW (V_CL \u2264 0.5V) during overcharge or charge overcurrent disables it. High-voltage tolerant: absolute maximum VDD-20V to VDD+0.3V." }, { "number": "4",@@ -56,7 +58,7 @@ "number": "5", "name": "VDD", "type": "power_in",- "description": "Positive power supply input, connected to the battery positive terminal through R1 (typ 100Ω). Operating range 1.5V to 8V (V_DSOP1); absolute maximum VSS-0.3V to VSS+10V. Bypass to VSS with C1 (typ 0.1μF, min 0.01μF)."+ "description": "Positive power supply input, connected to the battery positive terminal through R1 (typ 100\u03a9). Operating range 1.5V to 8V (V_DSOP1); absolute maximum VSS-0.3V to VSS+10V. Bypass to VSS with C1 (typ 0.1\u03bcF, min 0.01\u03bcF)." }, { "number": "6",