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Set visibility: public

Ray ·40181414d9 ·1mo ago ·parent 444481f
1 file changed +7−4
page.json+7−4
@@ -32,19 +32,19 @@         "number": "1",         "name": "I/O1",         "type": "passive",-        "description": "Protected I/O line 1. Anode of the first internal ESD steering diode; cathode is tied to pin 3. Connect in series/shunt to the data line requiring transient protection. Reverse working voltage 5.0 V, reverse breakdown 6.0 V min (IT = 1 mA), clamping voltage 9.8 V max at 1 A (8/20 \u00b5s) and 18 V max at 17 A (8/20 \u00b5s)."+        "description": "Protected I/O line 1. Anode of the first internal ESD steering diode; cathode is tied to pin 3. Connect in series/shunt to the data line requiring transient protection. Reverse working voltage 5.0 V, reverse breakdown 6.0 V min (IT = 1 mA), clamping voltage 9.8 V max at 1 A (8/20 µs) and 18 V max at 17 A (8/20 µs)."       },       {         "number": "2",         "name": "I/O2",         "type": "passive",-        "description": "Protected I/O line 2. Anode of the second internal ESD steering diode; cathode is tied to pin 3. Same electrical characteristics as pin 1 (VRWM = 5.0 V, VBR = 6.0 V min, VC = 9.8 V @ 1 A / 18 V @ 17 A, CJ \u2248 180 pF typ at VR = 0 V, 1 MHz)."+        "description": "Protected I/O line 2. Anode of the second internal ESD steering diode; cathode is tied to pin 3. Same electrical characteristics as pin 1 (VRWM = 5.0 V, VBR = 6.0 V min, VC = 9.8 V @ 1 A / 18 V @ 17 A, CJ ≈ 180 pF typ at VR = 0 V, 1 MHz)."       },       {         "number": "3",         "name": "COM/K",         "type": "passive",-        "description": "Common cathode of both internal ESD diodes. Typically connected to the local power/reference rail (or GND for bidirectional-line protection) to sink ESD/EFT surge current away from the protected I/Os. Reverse leakage current 10 \u00b5A max at VRWM = 5.0 V."+        "description": "Common cathode of both internal ESD diodes. Typically connected to the local power/reference rail (or GND for bidirectional-line protection) to sink ESD/EFT surge current away from the protected I/Os. Reverse leakage current 10 µA max at VRWM = 5.0 V."       }     ],     "provenance": {@@ -114,5 +114,8 @@     "docs/hsm05-7-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file