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gp1s094hcz0f: factory component page (tier=lcsc)

Ray ·d7cc6b2531 ·1mo ago ·parent fd1ec10
1 file changed +92−8
page.json+92−8
@@ -1,13 +1,102 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "gp1s094hcz0f",+  "title": "GP1S094HCZ0F",+  "brief": "Sharp Microelectronics Photointerrupters - Slot Type - Transistor Output, DIP-4. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Sharp Microelectronics Photointerrupters - Slot Type - Transistor Output, DIP-4. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "sensor",     "gp1s094hcz0f"   ],+  "component": {+    "mpn": "GP1S094HCZ0F",+    "manufacturer": "Sharp Microelectronics",+    "package": "DIP-4",+    "pin_count": 4,+    "category": "Sensor",+    "subcategory": "Photointerrupters - Slot Type - Transistor Output",+    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/7b52c0bb78aedae17047ee3f275d1438.pdf",+    "parts": {+      "symbol": "gp1s094hcz0f.kicad_sym",+      "footprint": "gp1s094hcz0f.kicad_mod",+      "model_3d": "gp1s094hcz0f.glb",+      "model_3d_step": "gp1s094hcz0f.step",+      "lbr": "gp1s094hcz0f.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "Anode",+        "type": "passive",+        "description": "Anode of the infrared emitting diode (IRED) on the emitter side. Drive with forward current IF up to 50mA max (VF typ 1.2V, max 1.4V at IF=20mA). Use a series current-limit resistor to set IF (typical operating IF=5mA at VCE=5V)."+      },+      {+        "number": "2",+        "name": "Collector",+        "type": "passive",+        "description": "Collector of the NPN phototransistor on the detector side. VCEO max 35V, IC max 20mA. Typical output collector current IC = 40-400uA at VCE=5V, IF=5mA. Connect through a load resistor RL to VCC to develop the output voltage."+      },+      {+        "number": "3",+        "name": "Emitter",+        "type": "passive",+        "description": "Emitter of the NPN phototransistor on the detector side. Typically tied to GND. VECO max 6V. Collector-emitter saturation voltage VCE(sat) max 0.4V at IF=10mA, IC=40uA."+      },+      {+        "number": "4",+        "name": "Cathode",+        "type": "passive",+        "description": "Cathode of the infrared emitting diode (IRED) on the emitter side. Typically tied to GND (or the low side of the current-limit resistor). Peak emission wavelength 950nm (GaAs, non-coherent)."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://datasheet.lcsc.com/datasheet/pdf/7b52c0bb78aedae17047ee3f275d1438.pdf",+        "pages": 9,+        "sha256": "91e78afb0b87d314",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 4,+        "described": 4,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "Sharp Microelectronics",+      "Package": "DIP-4",+      "Category": "Sensor",+      "Pins": "4"+    }+  },+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "gp1s094hcz0f"+  ],+  "discovery_pitch": "GP1S094HCZ0F (Sharp Microelectronics) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +114,5 @@     "docs/gp1s094hcz0f-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file