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GC2M0080120D
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SUPSiC Silicon Carbide Field Effect Transistor (MOSFET), TO247-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+44@@ -0,0 +1,44 @@+# GC2M0080120D++**SUPSiC** · Silicon Carbide Field Effect Transistor (MOSFET) · TO247-3++GC2M0080120D from SUPSiC, in a TO247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate. Insulated gate control terminal for the SiC N-channel enhancement-mode MOSFET. Absolute max VGS = -10/+25 V; recommended operating VGS = -5/+20 V. Typical VGS(th) = 2.9 V @ ID = 5 mA. |+| 2 | D | passive | Drain. High-voltage power terminal, connected to the tab. VDS(max) = 1200 V; continuous ID = 36 A @ TC = 25 °C (24 A @ TC = 100 °C); RDS(on) typ. 80 mΩ @ VGS = 20 V, ID = 20 A. |+| 3 | S | passive | Source. Low-side power terminal and gate-drive return; also the anode of the intrinsic SiC body diode (VSD typ. 4.3 V @ ISD = 10 A, VGS = -5 V). |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | SUPSiC |+| Package | TO247-3 |+| Category | Silicon Carbide (SiC) Devices |+| Pins | 3 |++## Ordering variants++Same part, different packaging or reel option.++- `GC2M0080120D`++## CAD (KiCad official)++- Symbol: `GC2M0080120D`+- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`+- 3D model: TO247-3 (KiCad packages3D, STEP)++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [SUPSiC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590905272234307584) (3 pp, sha256 `b9c8c524381629ac`, retrieved 2026-08-17, tier: lcsc)+- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/gc2m0080120d-datasheet.pdf)
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