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gc2m0080120d: factory component page (tier=lcsc)

Ray ·93991d730e ·1mo ago ·parent ae366c9
1 file changed +92−8
page.json+92−8
@@ -1,13 +1,102 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "gc2m0080120d",+  "title": "GC2M0080120D",+  "brief": "SUPSiC Silicon Carbide Field Effect Transistor (MOSFET), TO247-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "SUPSiC Silicon Carbide Field Effect Transistor (MOSFET), TO247-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "silicon carbide (sic) devices",     "gc2m0080120d"   ],+  "component": {+    "mpn": "GC2M0080120D",+    "manufacturer": "SUPSiC",+    "package": "TO247-3",+    "pin_count": 3,+    "category": "Silicon Carbide (SiC) Devices",+    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590905272234307584",+    "parts": {+      "symbol": "gc2m0080120d.kicad_sym",+      "footprint": "gc2m0080120d.kicad_mod",+      "model_3d": "gc2m0080120d.glb",+      "model_3d_step": "gc2m0080120d.step",+      "lbr": "gc2m0080120d.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate. Insulated gate control terminal for the SiC N-channel enhancement-mode MOSFET. Absolute max VGS = -10/+25 V; recommended operating VGS = -5/+20 V. Typical VGS(th) = 2.9 V @ ID = 5 mA."+      },+      {+        "number": "2",+        "name": "D",+        "type": "passive",+        "description": "Drain. High-voltage power terminal, connected to the tab. VDS(max) = 1200 V; continuous ID = 36 A @ TC = 25 \u00b0C (24 A @ TC = 100 \u00b0C); RDS(on) typ. 80 m\u03a9 @ VGS = 20 V, ID = 20 A."+      },+      {+        "number": "3",+        "name": "S",+        "type": "passive",+        "description": "Source. Low-side power terminal and gate-drive return; also the anode of the intrinsic SiC body diode (VSD typ. 4.3 V @ ISD = 10 A, VGS = -5 V)."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590905272234307584",+        "pages": 3,+        "sha256": "b9c8c524381629ac",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 3,+        "described": 3,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "SUPSiC",+      "Package": "TO247-3",+      "Category": "Silicon Carbide (SiC) Devices",+      "Pins": "3"+    }+  },+  "variants": [+    {+      "mpn": "GC2M0080120D",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "gc2m0080120d"+  ],+  "discovery_pitch": "GC2M0080120D (SUPSiC) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +114,5 @@     "docs/gc2m0080120d-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file