component
GC180N65MF
Public Made by Adomby adom
GOFORD MOSFETs, TO-263. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+98−8@@ -1,13 +1,108 @@ {+ "schema_version": 1,+ "type": "component", "slug": "gc180n65mf",+ "title": "GC180N65MF",+ "brief": "GOFORD MOSFETs, TO-263. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "GOFORD MOSFETs, TO-263. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "gc180n65mf" ],+ "component": {+ "mpn": "GC180N65MF",+ "manufacturer": "GOFORD",+ "package": "TO-263",+ "pin_count": 4,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://www.gofordsemi.com/upload/cn/propdf/GC180N65MF.pdf",+ "parts": {+ "symbol": "gc180n65mf.kicad_sym",+ "footprint": "gc180n65mf.kicad_mod",+ "model_3d": "gc180n65mf.glb",+ "model_3d_step": "gc180n65mf.step",+ "lbr": "gc180n65mf.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "G",+ "type": "input",+ "description": "Gate. Insulated gate terminal controlling channel conduction. VGS(th) = 3.0-5.0 V (typ 4.0 V); absolute maximum VGS = \u00b130 V. Drive with VGS = 10 V for rated RDS(on) \u2264 190 m\u03a9."+ },+ {+ "number": "2",+ "name": "D",+ "type": "passive",+ "description": "Drain. High-voltage power terminal. Rated VDS = 650 V, continuous ID = 20 A (TC = 25 \u00b0C), pulsed IDM = 60 A. Electrically connected to the exposed metal tab of the TO-263 package."+ },+ {+ "number": "3",+ "name": "S",+ "type": "passive",+ "description": "Source. Power return terminal for the MOSFET channel and anode of the intrinsic body diode. Body diode VSD \u2264 1.2 V at ISD = 10 A, continuous IS = 20 A."+ },+ {+ "number": "4",+ "name": "D (Tab)",+ "type": "passive",+ "description": "Drain tab (exposed thermal pad). Electrically identical to pin 2 (Drain) and serves as the primary thermal path. Solder to a copper pour for heat-sinking; RthJC = 0.83 \u00b0C/W."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://www.gofordsemi.com/upload/cn/propdf/GC180N65MF.pdf",+ "pages": null,+ "sha256": "d026b2041c45fc3d",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 4,+ "described": 4,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "GOFORD",+ "Package": "TO-263",+ "Category": "Transistors/Thyristors",+ "Pins": "4"+ }+ },+ "variants": [+ {+ "mpn": "GC180N65MF",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "gc180n65mf"+ ],+ "discovery_pitch": "GC180N65MF (GOFORD) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +120,5 @@ "docs/gc180n65mf-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }