GC180N65MF

@@ -0,0 +1,45 @@+# GC180N65MF++**GOFORD** · MOSFETs · TO-263++GC180N65MF from GOFORD, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate. Insulated gate terminal controlling channel conduction. VGS(th) = 3.0-5.0 V (typ 4.0 V); absolute maximum VGS = ±30 V. Drive with VGS = 10 V for rated RDS(on) ≤ 190 mΩ. |+| 2 | D | passive | Drain. High-voltage power terminal. Rated VDS = 650 V, continuous ID = 20 A (TC = 25 °C), pulsed IDM = 60 A. Electrically connected to the exposed metal tab of the TO-263 package. |+| 3 | S | passive | Source. Power return terminal for the MOSFET channel and anode of the intrinsic body diode. Body diode VSD ≤ 1.2 V at ISD = 10 A, continuous IS = 20 A. |+| 4 | D (Tab) | passive | Drain tab (exposed thermal pad). Electrically identical to pin 2 (Drain) and serves as the primary thermal path. Solder to a copper pour for heat-sinking; RthJC = 0.83 °C/W. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | GOFORD |+| Package | TO-263 |+| Category | Transistors/Thyristors |+| Pins | 4 |++## Ordering variants++Same part, different packaging or reel option.++- `GC180N65MF`++## CAD (KiCad official)++- Symbol: `GC180N65MF`+- Footprint: `Package_TO_SOT_SMD:TO-263-2`+- 3D model: TO-263 (KiCad packages3D, STEP)++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [GOFORD datasheet](https://www.gofordsemi.com/upload/cn/propdf/GC180N65MF.pdf) (None pp, sha256 `d026b2041c45fc3d`, retrieved 2026-08-17, tier: lcsc)+- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/gc180n65mf-datasheet.pdf)

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