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G50N03D5
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GOFORD MOSFETs, DFN-8L(5x6). Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+122−8@@ -1,13 +1,132 @@ {+ "schema_version": 1,+ "type": "component", "slug": "g50n03d5",+ "title": "G50N03D5",+ "brief": "GOFORD MOSFETs, DFN-8L(5x6). Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "GOFORD MOSFETs, DFN-8L(5x6). Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "g50n03d5" ],+ "component": {+ "mpn": "G50N03D5",+ "manufacturer": "GOFORD",+ "package": "DFN-8L(5x6)",+ "pin_count": 8,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://www.gofordsemi.com/upload/cn/propdf/G50N03D5.pdf",+ "parts": {+ "symbol": "g50n03d5.kicad_sym",+ "footprint": "g50n03d5.kicad_mod",+ "model_3d": "g50n03d5.glb",+ "model_3d_step": "g50n03d5.step",+ "lbr": "g50n03d5.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "S",+ "type": "passive",+ "description": "Source terminal of the N-channel MOSFET. Pins 1, 2, and 3 are internally tied together as the source connection; typically bonded to the ground/return rail in low-side switching. Body diode anode."+ },+ {+ "number": "2",+ "name": "S",+ "type": "passive",+ "description": "Source terminal (parallel connection with pins 1 and 3) to share current and reduce package resistance/inductance. Rated for ID = 50A continuous, IDM = 200A pulsed."+ },+ {+ "number": "3",+ "name": "S",+ "type": "passive",+ "description": "Source terminal (parallel connection with pins 1 and 2). Body-diode anode; VSD \u2264 1.2V at ISD = 20A."+ },+ {+ "number": "4",+ "name": "G",+ "type": "input",+ "description": "Gate terminal. Controls the channel via VGS; threshold VGS(th) = 1.1-2.4V (typ 1.6V). Absolute maximum VGS = \u00b120V. Total gate charge Qg \u2248 38.4nC at VGS = 10V."+ },+ {+ "number": "5",+ "name": "D",+ "type": "passive",+ "description": "Drain terminal. Pins 5, 6, 7, 8 (and the exposed thermal pad) are internally the drain connection for the N-channel MOSFET. VDS rating = 30V. Body-diode cathode."+ },+ {+ "number": "6",+ "name": "D",+ "type": "passive",+ "description": "Drain terminal (parallel with pins 5, 7, 8 and exposed pad). Used to carry drain current and conduct heat to the PCB."+ },+ {+ "number": "7",+ "name": "D",+ "type": "passive",+ "description": "Drain terminal (parallel with pins 5, 6, 8 and exposed pad). Continuous drain current ID = 50A at TC = 25\u00b0C."+ },+ {+ "number": "8",+ "name": "D",+ "type": "passive",+ "description": "Drain terminal (parallel with pins 5, 6, 7 and exposed thermal pad). All drain leads plus the pad should be soldered together to a copper plane to meet the 4.9\u00b0C/W junction-to-case thermal spec."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://www.gofordsemi.com/upload/cn/propdf/G50N03D5.pdf",+ "pages": null,+ "sha256": "731b3d4e30fe7344",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 8,+ "described": 8,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "GOFORD",+ "Package": "DFN-8L(5x6)",+ "Category": "Transistors/Thyristors",+ "Pins": "8"+ }+ },+ "variants": [+ {+ "mpn": "G50N03D5",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "g50n03d5"+ ],+ "discovery_pitch": "G50N03D5 (GOFORD) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +144,5 @@ "docs/g50n03d5-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }