component
FQB33N10LTM
Public Made by Adomby adom
onsemi MOSFETs, D2PAK. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+8−5@@ -32,25 +32,25 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated gate control terminal for the N-channel enhancement-mode MOSFET. VGS(th) = 1.0-2.0 V; absolute max VGSS = \u00b120 V. Total gate charge Qg \u2248 30 nC typ (40 nC max) at VGS = 5 V, VDS = 80 V, ID = 33 A."+ "description": "Gate. Insulated gate control terminal for the N-channel enhancement-mode MOSFET. VGS(th) = 1.0-2.0 V; absolute max VGSS = ±20 V. Total gate charge Qg ≈ 30 nC typ (40 nC max) at VGS = 5 V, VDS = 80 V, ID = 33 A." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. Power switch drain terminal, internally connected to the metal tab (pin 4). VDSS = 100 V; continuous ID = 33 A @ TC = 25 \u00b0C (23 A @ TC = 100 \u00b0C); pulsed IDM = 132 A. Static RDS(on) = 52 m\u03a9 max @ VGS = 10 V."+ "description": "Drain. Power switch drain terminal, internally connected to the metal tab (pin 4). VDSS = 100 V; continuous ID = 33 A @ TC = 25 °C (23 A @ TC = 100 °C); pulsed IDM = 132 A. Static RDS(on) = 52 mΩ max @ VGS = 10 V." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. Common return for the MOSFET channel and anode of the integrated body diode. Body-diode VSD \u2264 1.5 V @ IS = 33 A, VGS = 0; IS(max) = 33 A continuous, ISM = 132 A pulsed; trr \u2248 90 ns typ."+ "description": "Source. Common return for the MOSFET channel and anode of the integrated body diode. Body-diode VSD ≤ 1.5 V @ IS = 33 A, VGS = 0; IS(max) = 33 A continuous, ISM = 132 A pulsed; trr ≈ 90 ns typ." }, { "number": "4", "name": "D (TAB)", "type": "passive",- "description": "Drain / thermal tab. Exposed metal backside of the D2PAK, electrically identical to pin 2 (Drain) and the primary heat-dissipation path. R\u03b8JC = 1.18 \u00b0C/W max; solder to a copper pad (\u22651 in\u00b2 of 2 oz copper \u2248 R\u03b8JA = 40 \u00b0C/W) for full 127 W dissipation."+ "description": "Drain / thermal tab. Exposed metal backside of the D2PAK, electrically identical to pin 2 (Drain) and the primary heat-dissipation path. RθJC = 1.18 °C/W max; solder to a copper pad (≥1 in² of 2 oz copper ≈ RθJA = 40 °C/W) for full 127 W dissipation." } ], "provenance": {@@ -120,5 +120,8 @@ "docs/fqb33n10ltm-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }