component
FQB33N10LTM
Public Made by Adomby adom
onsemi MOSFETs, D2PAK. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+98−8@@ -1,13 +1,108 @@ {+ "schema_version": 1,+ "type": "component", "slug": "fqb33n10ltm",+ "title": "FQB33N10LTM",+ "brief": "onsemi MOSFETs, D2PAK. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "onsemi MOSFETs, D2PAK. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "fqb33n10ltm" ],+ "component": {+ "mpn": "FQB33N10LTM",+ "manufacturer": "onsemi",+ "package": "D2PAK",+ "pin_count": 4,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588950245576859648",+ "parts": {+ "symbol": "fqb33n10ltm.kicad_sym",+ "footprint": "fqb33n10ltm.kicad_mod",+ "model_3d": "fqb33n10ltm.glb",+ "model_3d_step": "fqb33n10ltm.step",+ "lbr": "fqb33n10ltm.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "G",+ "type": "input",+ "description": "Gate. Insulated gate control terminal for the N-channel enhancement-mode MOSFET. VGS(th) = 1.0-2.0 V; absolute max VGSS = \u00b120 V. Total gate charge Qg \u2248 30 nC typ (40 nC max) at VGS = 5 V, VDS = 80 V, ID = 33 A."+ },+ {+ "number": "2",+ "name": "D",+ "type": "passive",+ "description": "Drain. Power switch drain terminal, internally connected to the metal tab (pin 4). VDSS = 100 V; continuous ID = 33 A @ TC = 25 \u00b0C (23 A @ TC = 100 \u00b0C); pulsed IDM = 132 A. Static RDS(on) = 52 m\u03a9 max @ VGS = 10 V."+ },+ {+ "number": "3",+ "name": "S",+ "type": "passive",+ "description": "Source. Common return for the MOSFET channel and anode of the integrated body diode. Body-diode VSD \u2264 1.5 V @ IS = 33 A, VGS = 0; IS(max) = 33 A continuous, ISM = 132 A pulsed; trr \u2248 90 ns typ."+ },+ {+ "number": "4",+ "name": "D (TAB)",+ "type": "passive",+ "description": "Drain / thermal tab. Exposed metal backside of the D2PAK, electrically identical to pin 2 (Drain) and the primary heat-dissipation path. R\u03b8JC = 1.18 \u00b0C/W max; solder to a copper pad (\u22651 in\u00b2 of 2 oz copper \u2248 R\u03b8JA = 40 \u00b0C/W) for full 127 W dissipation."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588950245576859648",+ "pages": 10,+ "sha256": "12557c1b513bfde1",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 4,+ "described": 4,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "onsemi",+ "Package": "D2PAK",+ "Category": "Transistors/Thyristors",+ "Pins": "4"+ }+ },+ "variants": [+ {+ "mpn": "FQB33N10LTM",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "fqb33n10ltm"+ ],+ "discovery_pitch": "FQB33N10LTM (onsemi) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +120,5 @@ "docs/fqb33n10ltm-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }