component
DS91M040TSQX
Public Made by Adomby adom
Texas Instruments LVDS ICs, WQFN-32-EP(5x5). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+31−28@@ -50,7 +50,7 @@ "number": "1", "name": "RO0", "type": "tri_state",- "description": "Channel 0 LVCMOS receiver output; VOH \u2265 2.4 V at IOH = \u22128 mA, VOL \u2264 0.4 V at IOL = 8 mA; tri-stated (IOZ \u2264 \u00b110 \u00b5A) when RE0 = H."+ "description": "Channel 0 LVCMOS receiver output; VOH ≥ 2.4 V at IOH = −8 mA, VOL ≤ 0.4 V at IOL = 8 mA; tri-stated (IOZ ≤ ±10 µA) when RE0 = H." }, { "number": "2",@@ -62,7 +62,7 @@ "number": "3", "name": "RO1", "type": "tri_state",- "description": "Channel 1 LVCMOS receiver output; VOH \u2265 2.4 V at IOH = \u22128 mA, VOL \u2264 0.4 V at IOL = 8 mA; tri-stated (IOZ \u2264 \u00b110 \u00b5A) when RE1 = H."+ "description": "Channel 1 LVCMOS receiver output; VOH ≥ 2.4 V at IOH = −8 mA, VOL ≤ 0.4 V at IOL = 8 mA; tri-stated (IOZ ≤ ±10 µA) when RE1 = H." }, { "number": "4",@@ -74,7 +74,7 @@ "number": "5", "name": "RO2", "type": "tri_state",- "description": "Channel 2 LVCMOS receiver output; VOH \u2265 2.4 V at IOH = \u22128 mA, VOL \u2264 0.4 V at IOL = 8 mA; tri-stated (IOZ \u2264 \u00b110 \u00b5A) when RE2 = H."+ "description": "Channel 2 LVCMOS receiver output; VOH ≥ 2.4 V at IOH = −8 mA, VOL ≤ 0.4 V at IOL = 8 mA; tri-stated (IOZ ≤ ±10 µA) when RE2 = H." }, { "number": "6",@@ -86,7 +86,7 @@ "number": "7", "name": "RO3", "type": "tri_state",- "description": "Channel 3 LVCMOS receiver output; VOH \u2265 2.4 V at IOH = \u22128 mA, VOL \u2264 0.4 V at IOL = 8 mA; tri-stated (IOZ \u2264 \u00b110 \u00b5A) when RE3 = H."+ "description": "Channel 3 LVCMOS receiver output; VOH ≥ 2.4 V at IOH = −8 mA, VOL ≤ 0.4 V at IOL = 8 mA; tri-stated (IOZ ≤ ±10 µA) when RE3 = H." }, { "number": "8",@@ -98,7 +98,7 @@ "number": "9", "name": "FSEN2", "type": "input",- "description": "Failsafe receiver-type select for channels 1 and 3 with 300 k\u03a9 internal pullup; FSEN2 = L \u2192 Type 1 thresholds (VIT\u00b1 = \u00b150 mV), FSEN2 = H \u2192 Type 2 thresholds (VIT+ = 100-150 mV)."+ "description": "Failsafe receiver-type select for channels 1 and 3 with 300 kΩ internal pullup; FSEN2 = L → Type 1 thresholds (VIT± = ±50 mV), FSEN2 = H → Type 2 thresholds (VIT+ = 100-150 mV)." }, { "number": "10",@@ -110,121 +110,121 @@ "number": "11", "name": "VDD", "type": "power_in",- "description": "+3.3 V \u00b1 0.3 V power supply pin; recommended operating range VDD = 3.0-3.6 V."+ "description": "+3.3 V ± 0.3 V power supply pin; recommended operating range VDD = 3.0-3.6 V." }, { "number": "12", "name": "VDD", "type": "power_in",- "description": "+3.3 V \u00b1 0.3 V power supply pin; recommended operating range VDD = 3.0-3.6 V."+ "description": "+3.3 V ± 0.3 V power supply pin; recommended operating range VDD = 3.0-3.6 V." }, { "number": "13", "name": "RE2", "type": "input",- "description": "Channel 2 LVCMOS receiver enable with 300 k\u03a9 internal pullup; RE2 = L enables receiver, RE2 = H tri-states RO2 output."+ "description": "Channel 2 LVCMOS receiver enable with 300 kΩ internal pullup; RE2 = L enables receiver, RE2 = H tri-states RO2 output." }, { "number": "14", "name": "DE2", "type": "input",- "description": "Channel 2 LVCMOS driver enable with 300 k\u03a9 internal pulldown; DE2 = H enables driver, DE2 = L tri-states A2/B2 outputs."+ "description": "Channel 2 LVCMOS driver enable with 300 kΩ internal pulldown; DE2 = H enables driver, DE2 = L tri-states A2/B2 outputs." }, { "number": "15", "name": "RE3", "type": "input",- "description": "Channel 3 LVCMOS receiver enable with 300 k\u03a9 internal pullup; RE3 = L enables receiver, RE3 = H tri-states RO3 output."+ "description": "Channel 3 LVCMOS receiver enable with 300 kΩ internal pullup; RE3 = L enables receiver, RE3 = H tri-states RO3 output." }, { "number": "16", "name": "DE3", "type": "input",- "description": "Channel 3 LVCMOS driver enable with 300 k\u03a9 internal pulldown; DE3 = H enables driver, DE3 = L tri-states A3/B3 outputs."+ "description": "Channel 3 LVCMOS driver enable with 300 kΩ internal pulldown; DE3 = H enables driver, DE3 = L tri-states A3/B3 outputs." }, { "number": "17", "name": "A3", "type": "bidirectional",- "description": "Channel 3 non-inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 \u03a9, VOS = 0.3-2.1 V; input CM range \u22121.4 V to +3.8 V; 8 kV HBM ESD."+ "description": "Channel 3 non-inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 Ω, VOS = 0.3-2.1 V; input CM range −1.4 V to +3.8 V; 8 kV HBM ESD." }, { "number": "18", "name": "B3", "type": "bidirectional",- "description": "Channel 3 inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 \u03a9, VOS = 0.3-2.1 V; input CM range \u22121.4 V to +3.8 V; 8 kV HBM ESD."+ "description": "Channel 3 inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 Ω, VOS = 0.3-2.1 V; input CM range −1.4 V to +3.8 V; 8 kV HBM ESD." }, { "number": "19", "name": "A2", "type": "bidirectional",- "description": "Channel 2 non-inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 \u03a9, VOS = 0.3-2.1 V; input CM range \u22121.4 V to +3.8 V; 8 kV HBM ESD."+ "description": "Channel 2 non-inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 Ω, VOS = 0.3-2.1 V; input CM range −1.4 V to +3.8 V; 8 kV HBM ESD." }, { "number": "20", "name": "B2", "type": "bidirectional",- "description": "Channel 2 inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 \u03a9, VOS = 0.3-2.1 V; input CM range \u22121.4 V to +3.8 V; 8 kV HBM ESD."+ "description": "Channel 2 inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 Ω, VOS = 0.3-2.1 V; input CM range −1.4 V to +3.8 V; 8 kV HBM ESD." }, { "number": "21", "name": "A1", "type": "bidirectional",- "description": "Channel 1 non-inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 \u03a9, VOS = 0.3-2.1 V; input CM range \u22121.4 V to +3.8 V; 8 kV HBM ESD."+ "description": "Channel 1 non-inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 Ω, VOS = 0.3-2.1 V; input CM range −1.4 V to +3.8 V; 8 kV HBM ESD." }, { "number": "22", "name": "B1", "type": "bidirectional",- "description": "Channel 1 inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 \u03a9, VOS = 0.3-2.1 V; input CM range \u22121.4 V to +3.8 V; 8 kV HBM ESD."+ "description": "Channel 1 inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 Ω, VOS = 0.3-2.1 V; input CM range −1.4 V to +3.8 V; 8 kV HBM ESD." }, { "number": "23", "name": "A0", "type": "bidirectional",- "description": "Channel 0 non-inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 \u03a9, VOS = 0.3-2.1 V; input CM range \u22121.4 V to +3.8 V; 8 kV HBM ESD."+ "description": "Channel 0 non-inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 Ω, VOS = 0.3-2.1 V; input CM range −1.4 V to +3.8 V; 8 kV HBM ESD." }, { "number": "24", "name": "B0", "type": "bidirectional",- "description": "Channel 0 inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 \u03a9, VOS = 0.3-2.1 V; input CM range \u22121.4 V to +3.8 V; 8 kV HBM ESD."+ "description": "Channel 0 inverting M-LVDS driver output / receiver input; |VAB| = 480-650 mV into 50 Ω, VOS = 0.3-2.1 V; input CM range −1.4 V to +3.8 V; 8 kV HBM ESD." }, { "number": "25", "name": "DE0", "type": "input",- "description": "Channel 0 LVCMOS driver enable with 300 k\u03a9 internal pulldown; DE0 = H enables driver, DE0 = L tri-states A0/B0 outputs."+ "description": "Channel 0 LVCMOS driver enable with 300 kΩ internal pulldown; DE0 = H enables driver, DE0 = L tri-states A0/B0 outputs." }, { "number": "26", "name": "RE0", "type": "input",- "description": "Channel 0 LVCMOS receiver enable with 300 k\u03a9 internal pullup; RE0 = L enables receiver, RE0 = H tri-states RO0 output."+ "description": "Channel 0 LVCMOS receiver enable with 300 kΩ internal pullup; RE0 = L enables receiver, RE0 = H tri-states RO0 output." }, { "number": "27", "name": "DE1", "type": "input",- "description": "Channel 1 LVCMOS driver enable with 300 k\u03a9 internal pulldown; DE1 = H enables driver, DE1 = L tri-states A1/B1 outputs."+ "description": "Channel 1 LVCMOS driver enable with 300 kΩ internal pulldown; DE1 = H enables driver, DE1 = L tri-states A1/B1 outputs." }, { "number": "28", "name": "RE1", "type": "input",- "description": "Channel 1 LVCMOS receiver enable with 300 k\u03a9 internal pullup; RE1 = L enables receiver, RE1 = H tri-states RO1 output."+ "description": "Channel 1 LVCMOS receiver enable with 300 kΩ internal pullup; RE1 = L enables receiver, RE1 = H tri-states RO1 output." }, { "number": "29", "name": "VDD", "type": "power_in",- "description": "+3.3 V \u00b1 0.3 V power supply pin; recommended operating range VDD = 3.0-3.6 V."+ "description": "+3.3 V ± 0.3 V power supply pin; recommended operating range VDD = 3.0-3.6 V." }, { "number": "30", "name": "VDD", "type": "power_in",- "description": "+3.3 V \u00b1 0.3 V power supply pin; recommended operating range VDD = 3.0-3.6 V."+ "description": "+3.3 V ± 0.3 V power supply pin; recommended operating range VDD = 3.0-3.6 V." }, { "number": "31",@@ -236,13 +236,13 @@ "number": "32", "name": "FSEN1", "type": "input",- "description": "Failsafe receiver-type select for channels 0 and 2 with 300 k\u03a9 internal pullup; FSEN1 = L \u2192 Type 1 thresholds (VIT\u00b1 = \u00b150 mV), FSEN1 = H \u2192 Type 2 thresholds (VIT+ = 100-150 mV)."+ "description": "Failsafe receiver-type select for channels 0 and 2 with 300 kΩ internal pullup; FSEN1 = L → Type 1 thresholds (VIT± = ±50 mV), FSEN1 = H → Type 2 thresholds (VIT+ = 100-150 mV)." }, { "number": "33", "name": "DAP", "type": "power_in",- "description": "Exposed thermal pad, electrically GND; must be soldered to PCB ground plane for thermal and mechanical performance (\u03b8JC = 2.8 \u00b0C/W, \u03b8JA = 29.4 \u00b0C/W on 4-layer 2 oz Cu board)."+ "description": "Exposed thermal pad, electrically GND; must be soldered to PCB ground plane for thermal and mechanical performance (θJC = 2.8 °C/W, θJA = 29.4 °C/W on 4-layer 2 oz Cu board)." } ], "provenance": {@@ -323,5 +323,8 @@ "docs/ds91m040tsqx-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }