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Set visibility: public

Ray ·7db90de81a ·1mo ago ·parent 440ab5b
1 file changed +7−4
page.json+7−4
@@ -32,19 +32,19 @@         "number": "1",         "name": "G",         "type": "input",-        "description": "Gate. Insulated control terminal of the P-channel enhancement mode MOSFET. VGS threshold approximately -0.8 V to -2.0 V (VDS = VGS, ID = -1 mA); max VGSS = \u00b130 V. Typical Ciss \u2248 40 pF."+        "description": "Gate. Insulated control terminal of the P-channel enhancement mode MOSFET. VGS threshold approximately -0.8 V to -2.0 V (VDS = VGS, ID = -1 mA); max VGSS = ±30 V. Typical Ciss ≈ 40 pF."       },       {         "number": "2",         "name": "S",         "type": "passive",-        "description": "Source. Current-return terminal for the P-channel MOSFET; typically tied to the positive supply rail in a high-side switch. Body diode anode (VSD \u2248 -0.8 V typ, -1.4 V max at IS = -0.1 A)."+        "description": "Source. Current-return terminal for the P-channel MOSFET; typically tied to the positive supply rail in a high-side switch. Body diode anode (VSD ≈ -0.8 V typ, -1.4 V max at IS = -0.1 A)."       },       {         "number": "3",         "name": "D",         "type": "passive",-        "description": "Drain. Switched output terminal of the P-channel MOSFET. BVDSS = -60 V, RDS(on) = 10 \u03a9 max @ VGS = -5 V, continuous ID = -186 mA @ TA = +25 \u00b0C, pulsed IDM = -1.2 A. Body diode cathode."+        "description": "Drain. Switched output terminal of the P-channel MOSFET. BVDSS = -60 V, RDS(on) = 10 Ω max @ VGS = -5 V, continuous ID = -186 mA @ TA = +25 °C, pulsed IDM = -1.2 A. Body diode cathode."       }     ],     "provenance": {@@ -118,5 +118,8 @@     "docs/dmp610dlq-7-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file