DMP2305UQ-7

@@ -8,9 +8,9 @@ DMP2305UQ-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions e  | Pin | Name | Type | Function | |---|---|---|---|-| 1 | G | input | Gate; controls the P-channel MOSFET with VGSS limited to ±8 V and VGS(TH) of -0.5 V to -0.9 V at ID = -250μA. |-| 2 | S | passive | Source terminal of the P-channel MOSFET, shown at the bottom right of the top-view diagram. |-| 3 | D | passive | Drain terminal of the P-channel MOSFET with VDSS of -20 V and continuous ID of -4.2 A at TA = +25°C. |+| 1 | G | input | Gate; gate-source voltage limit is ±8 V and threshold is -0.5 V to -0.9 V at VDS = VGS, ID = -250μA. |+| 2 | S | passive | Source; P-channel MOSFET source terminal, with the body diode connected between drain and source. |+| 3 | D | passive | Drain; drain-source voltage rating is -20 V and continuous drain current is -4.2 A at TA = +25°C. |  ## Key specifications @@ -27,34 +27,22 @@ Limits as printed in the datasheet (page.json `metadata.characteristics` carries  | Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page | |---|---|---|---|---|---|---|---|-| Drain-Source Voltage | VDSS |  |  | -20 | V | TA = +25°C | 2 |-| Gate-Source Voltage | VGSS | -8 |  | 8 | V | TA = +25°C | 2 |-| Continuous Drain Current | ID |  |  | -4.2 | A | Steady state, TA = +25°C | 2 |-| Continuous Drain Current | ID |  |  | -3.4 | A | Steady state, TA = +70°C | 2 |-| Pulsed Drain Current | IDM |  |  | -10 | A | Repetitive rating, pulse width limited by junction temperature | 2 |-| Power Dissipation | PD |  |  | 1.4 | W | Device mounted on FR-4 PCB with 2oz. copper, t ≤ 10s | 2 |-| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |-| Thermal Resistance, Junction to Ambient | RθJA |  | 90 |  | °C/W | TA = +25°C | 2 |-| Thermal Resistance, Junction to Ambient (transient thermal response figure) | RθJA |  | 170 |  | °C/W | Fig. 12 | 5 | | Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS = 0V, ID = -250μA | 2 |-| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | TJ = +25°C, VDS = -20V, VGS = 0V | 2 |+| Zero Gate Voltage Drain Current (TJ = +25°C) | IDSS |  |  | -1 | μA | VDS = -20V, VGS = 0V | 2 | | Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = 8V, VDS = 0V | 2 |-| Gate Threshold Voltage | VGS(TH) | -0.9 |  | -0.5 | V | VDS = VGS, ID = -250μA | 2 |+| Gate Threshold Voltage | VGS(TH) | -0.5 |  | -0.9 | V | VDS = VGS, ID = -250μA | 2 | | Static Drain-Source On-Resistance | RDS(ON) |  | 45 | 60 | mΩ | VGS = -4.5V, ID = -4.2A | 2 | | Static Drain-Source On-Resistance | RDS(ON) |  | 60 | 90 | mΩ | VGS = -2.5V, ID = -3.4A | 2 | | Static Drain-Source On-Resistance | RDS(ON) |  | 87 | 113 | mΩ | VGS = -1.8V, ID = -2.0A | 2 |-| Forward Transfer Admittance | /YFS/ |  | 9 |  | S | VDS = -5V, ID = -4A | 2 |-| Input Capacitance | Ciss |  | 727 |  | pF | VDS = -20V, VGS = 0V, f = 1.0MHz | 2 |-| Output Capacitance | Coss |  | 69 |  | pF | VDS = -20V, VGS = 0V, f = 1.0MHz | 2 |-| Reverse Transfer Capacitance | Crss |  | 64 |  | pF | VDS = -20V, VGS = 0V, f = 1.0MHz | 2 |-| Gate Resistance | Rg |  | 23 |  | Ω | VGS = 0V, VDS = 0V, f = 1.0MHz | 2 |-| Total Gate Charge | Qg |  | 7.6 |  | nC | VGS = -4.5V, VDS = -4V, ID = -3.5A | 2 |-| Gate-Source Charge | Qgs |  | 1.4 |  | nC | VGS = -4.5V, VDS = -4V, ID = -3.5A | 2 |-| Gate-Drain Charge | Qgd |  | 1.2 |  | nC | VGS = -4.5V, VDS = -4V, ID = -3.5A | 2 |-| Turn-On Delay Time | tD(ON) |  | 14 |  | ns | VDS = -4V, VGS = -4.5V, RL = 4Ω, RG = 6Ω, ID = -1A | 2 |-| Turn-On Rise Time | tR |  | 13 |  | ns | VDS = -4V, VGS = -4.5V, RL = 4Ω, RG = 6Ω, ID = -1A | 2 |-| Turn-Off Delay Time | tD(OFF) |  | 53.8 |  | ns | VDS = -4V, VGS = -4.5V, RL = 4Ω, RG = 6Ω, ID = -1A | 2 |-| Turn-Off Fall Time | tF |  | 23.2 |  | ns | VDS = -4V, VGS = -4.5V, RL = 4Ω, RG = 6Ω, ID = -1A | 2 |+| Drain-Source Voltage | VDSS | -20 |  |  | V |  | 2 |+| Gate-Source Voltage | VGSS | -8 |  | 8 | V |  | 2 |+| Continuous Drain Current | ID | -4.2 |  |  | A | Steady state, TA = +25°C (Note 5) | 2 |+| Continuous Drain Current | ID | -3.4 |  |  | A | Steady state, TA = +70°C (Note 5) | 2 |+| Pulsed Drain Current | IDM | -10 |  |  | A | Repetitive rating, pulse width limited by junction temperature (Note 6) | 2 |+| Power Dissipation | PD |  |  | 1.4 | W | Note 5 (FR-4 PCB, 2oz. copper, t ≤ 10s) | 2 |+| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |+| Thermal Resistance, Junction to Ambient | RθJA |  | 90 |  | °C/W | @TA = +25°C | 2 |+| Transient Thermal Resistance Junction to Ambient (Fig. 12 basis) | RθJA |  | 170 |  | °C/W | Value used for transient thermal response curve (Fig. 12) | 5 |  ## Materials and finish 

@@ -1,6 +1,6 @@ {   "slug": "dmp2305uq-7",-  "version": "0.1.0",+  "version": "0.1.1",   "type": "component",   "description": "Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "tags": [@@ -54,7 +54,7 @@       "mouser": "621-DMP2305UQ-7"     },     "distributor_check": {-      "checked_at": "2026-11-12T04:59:31Z",+      "checked_at": "2026-11-12T08:00:52Z",       "source": "Component Ocean /api/assign-pns",       "digikey": {         "pn": "31-DMP2305UQ-7TR-ND",@@ -70,19 +70,19 @@         "number": "1",         "name": "G",         "type": "input",-        "description": "Gate; controls the P-channel MOSFET with VGSS limited to ±8 V and VGS(TH) of -0.5 V to -0.9 V at ID = -250μA."+        "description": "Gate; gate-source voltage limit is ±8 V and threshold is -0.5 V to -0.9 V at VDS = VGS, ID = -250μA."       },       {         "number": "2",         "name": "S",         "type": "passive",-        "description": "Source terminal of the P-channel MOSFET, shown at the bottom right of the top-view diagram."+        "description": "Source; P-channel MOSFET source terminal, with the body diode connected between drain and source."       },       {         "number": "3",         "name": "D",         "type": "passive",-        "description": "Drain terminal of the P-channel MOSFET with VDSS of -20 V and continuous ID of -4.2 A at TA = +25°C."+        "description": "Drain; drain-source voltage rating is -20 V and continuous drain current is -4.2 A at TA = +25°C."       }     ],     "provenance": {@@ -96,12 +96,12 @@         "consensus": "agreed",         "guards": "pin_guards 0.1: passed",         "guard_notes": [-          "extractor flagged: The top-view drawing labels G (bottom left), S (bottom right) and D (top) but prints no pin numbers.",+          "extractor flagged: The top-view diagram labels the terminals only by function: D on the single top pin, G on the bottom",           "vision extraction: provenance cannot be text-verified; needs consensus"         ],         "pages_sent": 7,-        "cost_usd": 0.2859,-        "at": "2026-11-12T04:59:20"+        "cost_usd": 0.2606,+        "at": "2026-11-12T08:00:36"       },       "datasheet": {         "url": "https://www.diodes.com/assets/Datasheets/DMP2305UQ-7.pdf",@@ -156,7 +156,7 @@         "zmin_mm": 0.0,         "centre_offset_mm": 0.0,         "footprint_binding": "identity",-        "sha256": "2d6924137bc5cf04ef71534f845bd043656fbd9adbb7e30fe45e4baa44de7ebf",+        "sha256": "15097f9b33e0af2b0aea86667637c86623cd8dacd26e6b518e39d76a227f108b",         "checked": "2026-11-12",         "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"       }

@@ -4,7 +4,7 @@   "slug": "dmp2305uq-7",   "title": "DMP2305UQ-7",   "brief": "Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",-  "version": "0.1.0",+  "version": "0.1.1",   "license": "CC-BY-SA-4.0",   "tags": [     "component",@@ -36,7 +36,7 @@       "mouser": "621-DMP2305UQ-7"     },     "distributor_check": {-      "checked_at": "2026-11-12T04:59:31Z",+      "checked_at": "2026-11-12T08:00:52Z",       "source": "Component Ocean /api/assign-pns",       "digikey": {         "pn": "31-DMP2305UQ-7TR-ND",@@ -52,19 +52,19 @@         "number": "1",         "name": "G",         "type": "input",-        "description": "Gate; controls the P-channel MOSFET with VGSS limited to ±8 V and VGS(TH) of -0.5 V to -0.9 V at ID = -250μA."+        "description": "Gate; gate-source voltage limit is ±8 V and threshold is -0.5 V to -0.9 V at VDS = VGS, ID = -250μA."       },       {         "number": "2",         "name": "S",         "type": "passive",-        "description": "Source terminal of the P-channel MOSFET, shown at the bottom right of the top-view diagram."+        "description": "Source; P-channel MOSFET source terminal, with the body diode connected between drain and source."       },       {         "number": "3",         "name": "D",         "type": "passive",-        "description": "Drain terminal of the P-channel MOSFET with VDSS of -20 V and continuous ID of -4.2 A at TA = +25°C."+        "description": "Drain; drain-source voltage rating is -20 V and continuous drain current is -4.2 A at TA = +25°C."       }     ],     "provenance": {@@ -78,12 +78,12 @@         "consensus": "agreed",         "guards": "pin_guards 0.1: passed",         "guard_notes": [-          "extractor flagged: The top-view drawing labels G (bottom left), S (bottom right) and D (top) but prints no pin numbers.",+          "extractor flagged: The top-view diagram labels the terminals only by function: D on the single top pin, G on the bottom",           "vision extraction: provenance cannot be text-verified; needs consensus"         ],         "pages_sent": 7,-        "cost_usd": 0.2859,-        "at": "2026-11-12T04:59:20"+        "cost_usd": 0.2606,+        "at": "2026-11-12T08:00:36"       },       "datasheet": {         "url": "https://www.diodes.com/assets/Datasheets/DMP2305UQ-7.pdf",@@ -138,7 +138,7 @@         "zmin_mm": 0,         "centre_offset_mm": 0,         "footprint_binding": "identity",-        "sha256": "2d6924137bc5cf04ef71534f845bd043656fbd9adbb7e30fe45e4baa44de7ebf",+        "sha256": "15097f9b33e0af2b0aea86667637c86623cd8dacd26e6b518e39d76a227f108b",         "checked": "2026-11-12",         "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"       }@@ -593,5 +593,7 @@   ],   "visibility": {     "public": true-  }+  },+  "description": "Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "org": "adom" }\ No newline at end of file