← Commit history

Set visibility: public

Ray ·ae5583c1af · ·parent c2c997c
1 file changed +9−6
page.json+9−6
@@ -38,31 +38,31 @@         "number": "2",         "name": "G1",         "type": "input",-        "description": "Gate of MOSFET 1. ESD-protected. VGS(TH) 0.8-1.6V, absolute max VGSS \u00b120V. Input capacitance Ciss \u2248 50pF, total gate charge Qg \u2248 1.2nC at VGS=10V."+        "description": "Gate of MOSFET 1. ESD-protected. VGS(TH) 0.8-1.6V, absolute max VGSS ±20V. Input capacitance Ciss ≈ 50pF, total gate charge Qg ≈ 1.2nC at VGS=10V."       },       {         "number": "3",         "name": "S1",         "type": "passive",-        "description": "Source of MOSFET 1. Body-diode return path (max continuous body-diode forward current IS = 0.9A, VSD \u2248 0.7V typ). Reference for VGS on MOSFET 1."+        "description": "Source of MOSFET 1. Body-diode return path (max continuous body-diode forward current IS = 0.9A, VSD ≈ 0.7V typ). Reference for VGS on MOSFET 1."       },       {         "number": "4",         "name": "S2",         "type": "passive",-        "description": "Source of MOSFET 2. Body-diode return path (max continuous body-diode forward current IS = 0.9A, VSD \u2248 0.7V typ). Reference for VGS on MOSFET 2."+        "description": "Source of MOSFET 2. Body-diode return path (max continuous body-diode forward current IS = 0.9A, VSD ≈ 0.7V typ). Reference for VGS on MOSFET 2."       },       {         "number": "5",         "name": "G2",         "type": "input",-        "description": "Gate of MOSFET 2. ESD-protected. VGS(TH) 0.8-1.6V, absolute max VGSS \u00b120V. Input capacitance Ciss \u2248 50pF, total gate charge Qg \u2248 1.2nC at VGS=10V."+        "description": "Gate of MOSFET 2. ESD-protected. VGS(TH) 0.8-1.6V, absolute max VGSS ±20V. Input capacitance Ciss ≈ 50pF, total gate charge Qg ≈ 1.2nC at VGS=10V."       },       {         "number": "6",         "name": "D1",         "type": "passive",-        "description": "Drain of MOSFET 1. Handles up to 30V VDSS and continuous ID up to 0.8A @ VGS=4.5V (1.1A @ VGS=10V). RDS(on) 0.16\u03a9 typ @ VGS=10V."+        "description": "Drain of MOSFET 1. Handles up to 30V VDSS and continuous ID up to 0.8A @ VGS=4.5V (1.1A @ VGS=10V). RDS(on) 0.16Ω typ @ VGS=10V."       }     ],     "provenance": {@@ -136,5 +136,8 @@     "docs/dmn3401lvq-13-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file