component
DMN33D8LDWQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-363. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+114−8@@ -1,13 +1,124 @@ {+ "schema_version": 1,+ "type": "component", "slug": "dmn33d8ldwq-7",+ "title": "DMN33D8LDWQ-7",+ "brief": "Diodes Incorporated MOSFETs, SOT-363. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "Diodes Incorporated MOSFETs, SOT-363. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "dmn33d8ldwq-7" ],+ "component": {+ "mpn": "DMN33D8LDWQ-7",+ "manufacturer": "Diodes Incorporated",+ "package": "SOT-363",+ "pin_count": 6,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603603016188637184",+ "parts": {+ "symbol": "dmn33d8ldwq-7.kicad_sym",+ "footprint": "dmn33d8ldwq-7.kicad_mod",+ "model_3d": "dmn33d8ldwq-7.glb",+ "model_3d_step": "dmn33d8ldwq-7.step",+ "lbr": "dmn33d8ldwq-7.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "S1",+ "type": "passive",+ "description": "Source of MOSFET Q1 (N-channel). Body-diode anode. Reference terminal for VGS1 and current return for Q1's channel."+ },+ {+ "number": "2",+ "name": "G1",+ "type": "input",+ "description": "Gate of MOSFET Q1 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = \u00b120 V. High-impedance MOS input; requires ESD-safe handling although the device is ESD protected."+ },+ {+ "number": "3",+ "name": "D2",+ "type": "passive",+ "description": "Drain of MOSFET Q2 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 \u00b0C, VGS = 4.5 V. Body-diode cathode for Q2."+ },+ {+ "number": "4",+ "name": "S2",+ "type": "passive",+ "description": "Source of MOSFET Q2 (N-channel). Body-diode anode. Reference terminal for VGS2 and current return for Q2's channel."+ },+ {+ "number": "5",+ "name": "G2",+ "type": "input",+ "description": "Gate of MOSFET Q2 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = \u00b120 V. High-impedance MOS input."+ },+ {+ "number": "6",+ "name": "D1",+ "type": "passive",+ "description": "Drain of MOSFET Q1 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 \u00b0C, VGS = 4.5 V. Body-diode cathode for Q1."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603603016188637184",+ "pages": null,+ "sha256": "8b2f04811fccb631",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 6,+ "described": 6,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "Diodes Incorporated",+ "Package": "SOT-363",+ "Category": "Transistors/Thyristors",+ "Pins": "6"+ }+ },+ "variants": [+ {+ "mpn": "DMN33D8LDWQ-7",+ "kind": "packaging"+ },+ {+ "mpn": "DMN33D8LDWQ-7-13",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "dmn33d8ldwq-7"+ ],+ "discovery_pitch": "DMN33D8LDWQ-7 (Diodes Incorporated) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +136,5 @@ "docs/dmn33d8ldwq-7-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }