component
DMN33D8LDWQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-363. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+8−5@@ -38,13 +38,13 @@ "number": "2", "name": "G1", "type": "input",- "description": "Gate of MOSFET Q1 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = \u00b120 V. High-impedance MOS input; requires ESD-safe handling although the device is ESD protected."+ "description": "Gate of MOSFET Q1 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = ±20 V. High-impedance MOS input; requires ESD-safe handling although the device is ESD protected." }, { "number": "3", "name": "D2", "type": "passive",- "description": "Drain of MOSFET Q2 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 \u00b0C, VGS = 4.5 V. Body-diode cathode for Q2."+ "description": "Drain of MOSFET Q2 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 °C, VGS = 4.5 V. Body-diode cathode for Q2." }, { "number": "4",@@ -56,13 +56,13 @@ "number": "5", "name": "G2", "type": "input",- "description": "Gate of MOSFET Q2 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = \u00b120 V. High-impedance MOS input."+ "description": "Gate of MOSFET Q2 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = ±20 V. High-impedance MOS input." }, { "number": "6", "name": "D1", "type": "passive",- "description": "Drain of MOSFET Q1 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 \u00b0C, VGS = 4.5 V. Body-diode cathode for Q1."+ "description": "Drain of MOSFET Q1 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 °C, VGS = 4.5 V. Body-diode cathode for Q1." } ], "provenance": {@@ -136,5 +136,8 @@ "docs/dmn33d8ldwq-7-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }