component
DMN3066LQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. ESD-protected control terminal of the N-channel MOSFET. VGS(TH) 0.5V-1.5V, absolute maximum VGSS = \u00b112V. Drives the channel between drain and source."+ "description": "Gate. ESD-protected control terminal of the N-channel MOSFET. VGS(TH) 0.5V-1.5V, absolute maximum VGSS = ±12V. Drives the channel between drain and source." }, { "number": "2", "name": "S", "type": "passive",- "description": "Source. Return terminal of drain current for the N-channel MOSFET. Body-diode anode; typical body-diode VSD \u2248 0.7V at IS = 0.6A, VGS = 0V."+ "description": "Source. Return terminal of drain current for the N-channel MOSFET. Body-diode anode; typical body-diode VSD ≈ 0.7V at IS = 0.6A, VGS = 0V." }, { "number": "3", "name": "D", "type": "passive",- "description": "Drain. High-voltage terminal of the N-channel MOSFET; BVDSS = 30V, continuous ID up to 3.6A at TA=+25\u00b0C (VGS=4.5V), pulsed IDM = 21A. Body-diode cathode."+ "description": "Drain. High-voltage terminal of the N-channel MOSFET; BVDSS = 30V, continuous ID up to 3.6A at TA=+25°C (VGS=4.5V), pulsed IDM = 21A. Body-diode cathode." } ], "provenance": {@@ -118,5 +118,8 @@ "docs/dmn3066lq-7-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }