component
DMN3051L-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.md+11−11@@ -2,15 +2,15 @@ **HXY MOSFET** · MOSFETs · SOT-23 -DMN3051L-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.+DMN3051L-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD. ## Pinout | Pin | Name | Type | Function | |---|---|---|---|-| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V (VGS), and the device is specified for operation with gate voltages as low as 2.5 V. |-| 2 | D | passive | Drain terminal; drain-source voltage is rated 30 V (VDS) and continuous drain current is rated 4 A (ID), with pulsed drain current of 16.4 A. |-| 3 | S | passive | Source terminal; maximum continuous drain-to-source diode forward current is 4 A and pulsed diode forward current is 16 A. |+| 1 | G | input | Gate terminal of the N-channel enhancement MOSFET; gate-source voltage is rated at ±20 V (VGS) and VGS(th) is specified 1.0 to 2.5 V at ID=250μA. |+| 2 | D | passive | Drain terminal; rated 30 V drain-source voltage (VDS) and 4 A continuous drain current (ID), with 16.4 A pulsed drain current. |+| 3 | S | passive | Source terminal; maximum continuous body-diode forward current is 4 A (IS) and pulsed diode forward current is 16 A (ISM). | ## Key specifications @@ -27,12 +27,6 @@ Limits as printed in the datasheet (page.json `metadata.characteristics` carries | Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page | |---|---|---|---|---|---|---|---|-| Drain-Source Voltage | VDS | | | 30 | V | TA=25℃ | 1 |-| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25℃ | 1 |-| Drain Current-Continuous | ID | | | 4 | A | TA=25℃ | 1 |-| Drain Current-Pulsed | IDM | | | 16.4 | A | Note 1 | 1 |-| Maximum Power Dissipation | PD | | | 1 | W | TA=25℃ | 1 |-| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 | | Drain-Source Breakdown Voltage | V(BR)DSS | 30 | | | V | VGS=0V, ID=250μA | 2 | | Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V, VGS=0V | 2 | | Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS= ±20V | 2 |@@ -42,7 +36,13 @@ Limits as printed in the datasheet (page.json `metadata.characteristics` carries | Maximum Continuous Drain to Source Diode Forward Current | IS | | | 4 | A | | 2 | | Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | 16 | A | | 2 | | Drain to Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=4A | 2 |-| Thermal Resistance, Junction-to-Ambient | RθJA | | 125 | | ℃/W | Note 2 | 1 |+| Drain-Source Voltage | VDS | | | 30 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current-Continuous | ID | | | 4 | A | | 1 |+| Drain Current-Pulsed | IDM | | | 16.4 | A | Note 1 | 1 |+| Maximum Power Dissipation | PD | | | 1 | W | | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 125 | ℃/W | Note 2 | 1 | ## CAD (KiCad official)
package.json+11−12@@ -1,6 +1,6 @@ { "slug": "dmn3051l-hxy",- "version": "0.1.1",+ "version": "0.1.2", "type": "component", "description": "HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.", "tags": [@@ -28,8 +28,7 @@ "viewers/symbol.html", "viewers/footprint.html", "dmn3051l-hxy-hero.glb",- "dmn3051l-hxy-hero.overlay.json",- "dmn3051l-hxy-etched.glb"+ "dmn3051l-hxy-hero.overlay.json" ], "component": { "mpn": "DMN3051L-HXY",@@ -43,7 +42,7 @@ "symbol": "dmn3051l-hxy.kicad_sym", "footprint": "dmn3051l-hxy.kicad_mod", "model_3d": "dmn3051l-hxy-hero.glb",- "model_3d_plain": "dmn3051l-hxy-etched.glb",+ "model_3d_plain": "dmn3051l-hxy.glb", "model_3d_step": "dmn3051l-hxy-etched.step", "model_3d_step_plain": "dmn3051l-hxy.step", "lbr": "dmn3051l-hxy.lbr"@@ -52,7 +51,7 @@ "lcsc": "C22367343" }, "distributor_check": {- "checked_at": "2026-11-12T07:59:56Z",+ "checked_at": "2026-11-12T23:24:09Z", "source": "Component Ocean /api/assign-pns", "digikey": { "pn": null,@@ -68,19 +67,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate terminal; gate-source voltage is rated ±20 V (VGS), and the device is specified for operation with gate voltages as low as 2.5 V."+ "description": "Gate terminal of the N-channel enhancement MOSFET; gate-source voltage is rated at ±20 V (VGS) and VGS(th) is specified 1.0 to 2.5 V at ID=250μA." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain terminal; drain-source voltage is rated 30 V (VDS) and continuous drain current is rated 4 A (ID), with pulsed drain current of 16.4 A."+ "description": "Drain terminal; rated 30 V drain-source voltage (VDS) and 4 A continuous drain current (ID), with 16.4 A pulsed drain current." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source terminal; maximum continuous drain-to-source diode forward current is 4 A and pulsed diode forward current is 16 A."+ "description": "Source terminal; maximum continuous body-diode forward current is 4 A (IS) and pulsed diode forward current is 16 A (ISM)." } ], "provenance": {@@ -94,11 +93,11 @@ "consensus": "agreed", "guards": "pin_guards 0.1: passed", "guard_notes": [- "extractor flagged: Pin-to-function mapping is taken from the printed labels 'PIN1 G', 'PIN2 D', 'PIN3 S' on page 1. Pin; Datasheet gives the ratings for the device as a whole, not per pin. The pin descriptions cite those "+ "extractor flagged: The datasheet pin diagram is not rendered in the extracted text; the pin assignments come from the l; Pin types are assigned per KiCad ERC conventions (gate as input, drain and source as passive) and ar" ], "pages_sent": 6,- "cost_usd": 0.0266,- "at": "2026-11-12T07:59:38"+ "cost_usd": 0.0276,+ "at": "2026-11-12T23:24:02" }, "datasheet": { "url": "https://datasheet.lcsc.com/datasheet/pdf/ac3477ae0520fcb8fed114a445d861d0.pdf",@@ -153,7 +152,7 @@ "zmin_mm": 0.0, "centre_offset_mm": 0.0, "footprint_binding": "identity",- "sha256": "ae088993c9d7c8948da2a816e4f370ab582fac9eba3fc0a04368b0288f236896",+ "sha256": "5f17bb3a3458274cef76545203c272e1970b60fdf334327ed1f69fb3445c6b63", "checked": "2026-11-12", "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)" }
page.json+14−13@@ -4,7 +4,7 @@ "slug": "dmn3051l-hxy", "title": "DMN3051L-HXY", "brief": "HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",- "version": "0.1.1",+ "version": "0.1.2", "license": "CC-BY-SA-4.0", "tags": [ "component",@@ -25,7 +25,7 @@ "symbol": "dmn3051l-hxy.kicad_sym", "footprint": "dmn3051l-hxy.kicad_mod", "model_3d": "dmn3051l-hxy-hero.glb",- "model_3d_plain": "dmn3051l-hxy-etched.glb",+ "model_3d_plain": "dmn3051l-hxy.glb", "model_3d_step": "dmn3051l-hxy-etched.step", "model_3d_step_plain": "dmn3051l-hxy.step", "lbr": "dmn3051l-hxy.lbr"@@ -34,7 +34,7 @@ "lcsc": "C22367343" }, "distributor_check": {- "checked_at": "2026-11-12T07:59:56Z",+ "checked_at": "2026-11-12T23:24:09Z", "source": "Component Ocean /api/assign-pns", "digikey": { "pn": null,@@ -50,19 +50,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate terminal; gate-source voltage is rated ±20 V (VGS), and the device is specified for operation with gate voltages as low as 2.5 V."+ "description": "Gate terminal of the N-channel enhancement MOSFET; gate-source voltage is rated at ±20 V (VGS) and VGS(th) is specified 1.0 to 2.5 V at ID=250μA." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain terminal; drain-source voltage is rated 30 V (VDS) and continuous drain current is rated 4 A (ID), with pulsed drain current of 16.4 A."+ "description": "Drain terminal; rated 30 V drain-source voltage (VDS) and 4 A continuous drain current (ID), with 16.4 A pulsed drain current." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source terminal; maximum continuous drain-to-source diode forward current is 4 A and pulsed diode forward current is 16 A."+ "description": "Source terminal; maximum continuous body-diode forward current is 4 A (IS) and pulsed diode forward current is 16 A (ISM)." } ], "provenance": {@@ -76,11 +76,11 @@ "consensus": "agreed", "guards": "pin_guards 0.1: passed", "guard_notes": [- "extractor flagged: Pin-to-function mapping is taken from the printed labels 'PIN1 G', 'PIN2 D', 'PIN3 S' on page 1. Pin; Datasheet gives the ratings for the device as a whole, not per pin. The pin descriptions cite those "+ "extractor flagged: The datasheet pin diagram is not rendered in the extracted text; the pin assignments come from the l; Pin types are assigned per KiCad ERC conventions (gate as input, drain and source as passive) and ar" ], "pages_sent": 6,- "cost_usd": 0.0266,- "at": "2026-11-12T07:59:38"+ "cost_usd": 0.0276,+ "at": "2026-11-12T23:24:02" }, "datasheet": { "url": "https://datasheet.lcsc.com/datasheet/pdf/ac3477ae0520fcb8fed114a445d861d0.pdf",@@ -135,7 +135,7 @@ "zmin_mm": 0, "centre_offset_mm": 0, "footprint_binding": "identity",- "sha256": "ae088993c9d7c8948da2a816e4f370ab582fac9eba3fc0a04368b0288f236896",+ "sha256": "5f17bb3a3458274cef76545203c272e1970b60fdf334327ed1f69fb3445c6b63", "checked": "2026-11-12", "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)" }@@ -430,10 +430,11 @@ "viewers/symbol.html", "viewers/footprint.html", "dmn3051l-hxy-hero.glb",- "dmn3051l-hxy-hero.overlay.json",- "dmn3051l-hxy-etched.glb"+ "dmn3051l-hxy-hero.overlay.json" ], "visibility": { "public": true- }+ },+ "description": "HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "org": "adom" }