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dmn2710uvq-7: factory component page (tier=lcsc)

Ray ·0bd7026373 ·26d ago ·parent 6c2d103
1 file changed +114−8
page.json+114−8
@@ -1,13 +1,124 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "dmn2710uvq-7",+  "title": "DMN2710UVQ-7",+  "brief": "Diodes Incorporated MOSFETs, SOT-563. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Diodes Incorporated MOSFETs, SOT-563. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "dmn2710uvq-7"   ],+  "component": {+    "mpn": "DMN2710UVQ-7",+    "manufacturer": "Diodes Incorporated",+    "package": "SOT-563",+    "pin_count": 6,+    "category": "Transistors/Thyristors",+    "subcategory": "MOSFETs",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603603015248977920",+    "parts": {+      "symbol": "dmn2710uvq-7.kicad_sym",+      "footprint": "dmn2710uvq-7.kicad_mod",+      "model_3d": "dmn2710uvq-7.glb",+      "model_3d_step": "dmn2710uvq-7.step",+      "lbr": "dmn2710uvq-7.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "S2",+        "type": "passive",+        "description": "Source of MOSFET 2 (N-channel enhancement-mode FET Q2). Body diode anode of Q2."+      },+      {+        "number": "2",+        "name": "G1",+        "type": "input",+        "description": "Gate of MOSFET 1 (Q1). ESD-protected gate; VGSS = \u00b16V max, VGS(TH) = 0.5-1.0V."+      },+      {+        "number": "3",+        "name": "D1",+        "type": "passive",+        "description": "Drain of MOSFET 1 (Q1). BVDSS = 20V, continuous ID = 0.92A @ VGS = 4.5V, TA = +25\u00b0C."+      },+      {+        "number": "4",+        "name": "S1",+        "type": "passive",+        "description": "Source of MOSFET 1 (Q1). Body diode anode of Q1."+      },+      {+        "number": "5",+        "name": "G2",+        "type": "input",+        "description": "Gate of MOSFET 2 (Q2). ESD-protected gate; VGSS = \u00b16V max, VGS(TH) = 0.5-1.0V."+      },+      {+        "number": "6",+        "name": "D2",+        "type": "passive",+        "description": "Drain of MOSFET 2 (Q2). BVDSS = 20V, continuous ID = 0.92A @ VGS = 4.5V, TA = +25\u00b0C."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603603015248977920",+        "pages": null,+        "sha256": "07e77b4b56133eb9",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 6,+        "described": 6,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "Diodes Incorporated",+      "Package": "SOT-563",+      "Category": "Transistors/Thyristors",+      "Pins": "6"+    }+  },+  "variants": [+    {+      "mpn": "DMN2710UVQ-7",+      "kind": "packaging"+    },+    {+      "mpn": "DMN2710UVQ-7-13",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "dmn2710uvq-7"+  ],+  "discovery_pitch": "DMN2710UVQ-7 (Diodes Incorporated) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +136,5 @@     "docs/dmn2710uvq-7-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file