component
CSD16301Q2
Public Made by Adomby adom
Texas Instruments MOSFETs, WSON-6(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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csd16301q2: specified limits as data (metadata.characteristics, 36 rows from the datasheet)
2 files changed
+482
README.md+43@@ -25,6 +25,49 @@ CSD16301Q2 from Texas Instruments, in a WSON-6(2x2). Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 7 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-source voltage (BVDSS) | BVDSS | 25 | | | V | VGS = 0V, ID = 250μA | 3 |+| Drain-to-source leakage current | IDSS | | | 1 | μA | VGS = 0V, VDS = 20V | 3 |+| Gate-to-source leakage current | IGSS | | | 100 | nA | VDS = 0V, VGS = +10/–8V | 3 |+| Gate-to-source threshold voltage | VGS(th) | 0.9 | 1.1 | 1.55 | V | VDS = VGS, IDS = 250μA | 3 |+| Drain-to-source on resistance | RDS(on) | | 27 | 34 | mΩ | VGS = 3V, IDS = 4A | 3 |+| Drain-to-source on resistance | RDS(on) | | 23 | 29 | mΩ | VGS = 4.5V, IDS = 4A | 3 |+| Drain-to-source on resistance | RDS(on) | | 19 | 24 | mΩ | VGS = 8V, IDS = 4A | 3 |+| Input capacitance | CISS | | 260 | 340 | pF | VGS = 0V, VDS = 12.5V, ƒ = 1MHz | 3 |+| Output capacitance | COSS | | 165 | 215 | pF | VGS = 0V, VDS = 12.5V, ƒ = 1MHz | 3 |+| Reverse transfer capacitance | CRSS | | 13 | 17 | pF | VGS = 0V, VDS = 12.5V, ƒ = 1MHz | 3 |+| Series gate resistance | Rg | | 1.3 | 2.6 | Ω | | 3 |+| Gate charge total (4.5 V) | Qg | | 2 | 2.8 | nC | VDS = 10V, IDS = 4A | 3 |+| Diode forward voltage | VSD | | 0.8 | 1 | V | IDS = 4A, VGS = 0V | 3 |+| Junction-to-ambient thermal resistance | RθJA | | | 65 | °C/W | TA = 25°C (unless otherwise stated); device on 1in² 2oz Cu pad (Max RθJA = 65°C/W) | 3 |+| Junction-to-case thermal resistance | RθJC | | | 8.4 | °C/W | TA = 25°C (unless otherwise stated) | 3 |+| Drain-to-source voltage | VDS | | | 25 | V | TA = 25°C | 1 |+| Gate-to-source voltage | VGS | -8 | | 10 | V | TA = 25°C | 1 |+| Continuous Drain Current (Package Limited) | ID | | | 5 | A | TA = 25°C | 1 |+| Continuous Drain Current (Silicon Limited), TC = 25°C | ID | | | 20 | A | TC = 25°C | 1 |+| Continuous Drain Current | ID | | | 8.2 | A | TA = 25°C; footnote 1 (RθJA on 1in² pad) | 1 |+| Pulsed Drain Current | IDM | | | 85 | A | pulse duration ≤ 100μs, duty cycle ≤ 1% | 1 |+| Power Dissipation | PD | | | 2.5 | W | TA = 25°C; footnote 1 (RθJA on 1in² pad) | 1 |+| Power Dissipation, TC = 25°C | PD | | | 15 | W | TC = 25°C | 1 |+| Operating junction and storage temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Avalanche energy, single pulse | EAS | | | 10 | mJ | ID = 14A, L = 0.1mH, RG = 25Ω | 1 |+| Forward transconductance | gfs | | 16.5 | | S | VDS = 15V, IDS = 4A | 3 |+| Gate charge gate-to-drain | Qgd | | 0.4 | | nC | | 3 |+| Gate charge gate-to-source | Qgs | | 0.6 | | nC | | 3 |+| Gate charge at Vth | Qg(th) | | 0.3 | | nC | | 3 |+| Output charge | QOSS | | 3 | | nC | VDS = 12.5V, VGS = 0V | 3 |+| Turnon delay time | td(on) | | 2.7 | | ns | VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω | 3 |+| Rise time | tr | | 4.4 | | ns | VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω | 3 |+| Turnoff delay time | td(off) | | 4.1 | | ns | VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω | 3 |+| Fall time | tf | | 1.7 | | ns | VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω | 3 |+| Reverse recovery charge | Qrr | | 5.1 | | nC | VDD = 12.5V, IF = 4A, di/dt = 200A/μs | 3 |+| Reverse recovery time | trr | | 11 | | ns | VDD = 12.5V, IF = 4A, di/dt = 200A/μs | 3 |+ ## CAD (KiCad official) - Symbol: `CSD16301Q2`
page.json+439@@ -160,6 +160,445 @@ "Package": "WSON-6(2x2)", "Category": "Transistors/Thyristors", "Pins": "7"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "e81fd6c7ebe1f521",+ "rows": [+ {+ "name": "Drain-to-source voltage (BVDSS)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 25,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-source leakage current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0V, VDS = 20V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0V, VGS = +10/–8V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-source threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.9,+ "typ": 1.1,+ "max": 1.55,+ "conditions": "VDS = VGS, IDS = 250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-source on resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 27,+ "max": 34,+ "conditions": "VGS = 3V, IDS = 4A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-source on resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 23,+ "max": 29,+ "conditions": "VGS = 4.5V, IDS = 4A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-source on resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 19,+ "max": 24,+ "conditions": "VGS = 8V, IDS = 4A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "CISS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 260,+ "max": 340,+ "conditions": "VGS = 0V, VDS = 12.5V, ƒ = 1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "COSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 165,+ "max": 215,+ "conditions": "VGS = 0V, VDS = 12.5V, ƒ = 1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "CRSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 13,+ "max": 17,+ "conditions": "VGS = 0V, VDS = 12.5V, ƒ = 1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Series gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.3,+ "max": 2.6,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate charge total (4.5 V)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2,+ "max": 2.8,+ "conditions": "VDS = 10V, IDS = 4A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1,+ "conditions": "IDS = 4A, VGS = 0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-ambient thermal resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 65,+ "conditions": "TA = 25°C (unless otherwise stated); device on 1in² 2oz Cu pad (Max RθJA = 65°C/W)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-case thermal resistance",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 8.4,+ "conditions": "TA = 25°C (unless otherwise stated)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -8,+ "typ": null,+ "max": 10,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Package Limited)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Silicon Limited), TC = 25°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8.2,+ "conditions": "TA = 25°C; footnote 1 (RθJA on 1in² pad)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 85,+ "conditions": "pulse duration ≤ 100μs, duty cycle ≤ 1%",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TA = 25°C; footnote 1 (RθJA on 1in² pad)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation, TC = 25°C",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "ID = 14A, L = 0.1mH, RG = 25Ω",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 16.5,+ "max": null,+ "conditions": "VDS = 15V, IDS = 4A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate charge gate-to-drain",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.4,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate charge gate-to-source",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.6,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate charge at Vth",+ "symbol": "Qg(th)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.3,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output charge",+ "symbol": "QOSS",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "VDS = 12.5V, VGS = 0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turnon delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 2.7,+ "max": null,+ "conditions": "VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 4.4,+ "max": null,+ "conditions": "VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turnoff delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 4.1,+ "max": null,+ "conditions": "VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 1.7,+ "max": null,+ "conditions": "VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.1,+ "max": null,+ "conditions": "VDD = 12.5V, IF = 4A, di/dt = 200A/μs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": null,+ "conditions": "VDD = 12.5V, IF = 4A, di/dt = 200A/μs",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],