← Commit history

cs10n70fa9r: factory component page (tier=lcsc)

Ray ·f2164c2285 · ·parent 8e56c3d
1 file changed +330−26
page.json+330−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "cs10n70fa9r",+  "title": "CS10N70FA9R",+  "brief": "Wuxi China Resources Huajing Microelectronics MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Wuxi China Resources Huajing Microelectronics MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "cs10n70fa9r.kicad_sym",-    "cs10n70fa9r.kicad_mod",-    "cs10n70fa9r.glb",-    "cs10n70fa9r.step",-    "cs10n70fa9r.lbr",-    "docs/hero.png",-    "docs/cs10n70fa9r-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "cs10n70fa9r-hero.glb",-    "cs10n70fa9r-hero.overlay.json"-  ],   "component": {     "mpn": "CS10N70FA9R",     "manufacturer": "Wuxi China Resources Huajing Microelectronics",@@ -138,10 +121,331 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "Wuxi China Resources Huajing Microelectronics",+      "Package": "TO-220F",+      "Category": "Transistors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "65b25eb94fb9a9d676ff27f52e07159ef132442c6cff0adb339dfdd8d2e9a62c",+      "rows": [+        {+          "name": "Drain-to-Source Voltage",+          "symbol": "VDSS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 700,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 6.3,+          "conditions": "TC = 100 °C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 40,+          "conditions": "Repetitive rating; pulse width limited by maximum junction temperature",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-to-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single Pulse Avalanche Energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 480,+          "conditions": "L=10mH, ID=9.8A, Start TJ=25℃",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Peak Diode Recovery dv/dt",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 5,+          "conditions": "ISD=10A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 40,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Derating Factor above 25°C",+          "symbol": "",+          "kind": "absolute_maximum",+          "unit": "W/℃",+          "min": null,+          "typ": null,+          "max": 0.32,+          "conditions": "above 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating Junction and Storage Temperature Range",+          "symbol": "TJ, Tstg",+          "kind": "absolute_maximum",+          "unit": "℃",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Temperature for Soldering",+          "symbol": "TL",+          "kind": "absolute_maximum",+          "unit": "℃",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain to Source Breakdown Voltage",+          "symbol": "VDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 700,+          "typ": null,+          "max": null,+          "conditions": "VGS=0V, ID=250µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain to Source Leakage Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "VDS=700V, VGS=0V, Ta = 25℃",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain to Source Leakage Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VDS=560V, VGS=0V, Ta = 125℃",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate to Source Forward Leakage",+          "symbol": "IGSS(F)",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VGS=+30V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate to Source Reverse Leakage",+          "symbol": "IGSS(R)",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": -100,+          "conditions": "VGS=-30V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source On-Resistance",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 0.88,+          "max": 1.05,+          "conditions": "VGS=10V, ID=5A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage",+          "symbol": "VGS(TH)",+          "kind": "electrical",+          "unit": "V",+          "min": 2,+          "typ": null,+          "max": 4,+          "conditions": "VDS = VGS, ID = 250µA; pulse width tp≤300µs, δ≤2%",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Continuous Source Current (Body Diode)",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Maximum Pulsed Current (Body Diode)",+          "symbol": "ISM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 40,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.5,+          "conditions": "IS=10.0A, VGS=0V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-Case Thermal Resistance",+          "symbol": "RθJC",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": null,+          "max": 3.13,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-Ambient Thermal Resistance",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": null,+          "max": 62.5,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "cs10n70fa9r"+  ],+  "discovery_pitch": "CS10N70FA9R (Wuxi China Resources Huajing Microelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {     "name": "Ray",     "email": "[email protected]"-  }-}\ No newline at end of file+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "cs10n70fa9r.kicad_sym",+    "cs10n70fa9r.kicad_mod",+    "cs10n70fa9r.glb",+    "cs10n70fa9r.step",+    "cs10n70fa9r.lbr",+    "docs/hero.png",+    "docs/cs10n70fa9r-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "cs10n70fa9r-hero.glb",+    "cs10n70fa9r-hero.overlay.json"+  ]+}