component
CRST030N10N
Public Made by Adomby adom
CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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crst030n10n: specified limits as data (metadata.characteristics, 26 rows from the datasheet)
2 files changed
+353−1
README.md+33@@ -21,6 +21,39 @@ CRST030N10N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 100 | V | | 1 |+| Continuous drain current (TC = 25°C, silicon limit) | ID | | | 207 | A | TC = 25°C (Silicon limit) | 1 |+| Continuous drain current (TC = 25°C, package limit) | ID | | | 180 | A | TC = 25°C (Package limit) | 1 |+| Continuous drain current (TC = 100°C, silicon limit) | ID | | | 131 | A | TC = 100°C (Silicon limit) | 1 |+| Pulsed drain current | ID pulse | | | 720 | A | TC = 25°C, tp limited by Tjmax | 1 |+| Avalanche energy, single pulse | EAS | | | 529 | mJ | L=0.5mH, Rg=25Ω | 1 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |+| Power dissipation | Ptot | | | 227 | W | TC = 25°C | 1 |+| Operating junction and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |+| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS, ID=250uA | 2 |+| Zero gate voltage drain current | IDSS | | 0.05 | 1 | µA | VDS=100V, VGS=0V, Tj=25°C | 2 |+| Zero gate voltage drain current | IDSS | | | 10 | µA | VDS=100V, VGS=0V, Tj=125°C | 2 |+| Gate-source leakage current | IGSS | | 10 | 100 | nA | VGS=±20V, VDS=0V | 2 |+| Drain-source on-state resistance | RDS(on) | | 2.5 | 3 | mΩ | VGS=10V, ID=90A | 2 |+| Gate resistance | RG | | 1.8 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |+| Input capacitance | Ciss | | 11355 | | pF | VGS=0V, VDS=50V, f=1MHz | 2 |+| Output capacitance | Coss | | 1446 | | pF | VGS=0V, VDS=50V, f=1MHz | 2 |+| Reverse transfer capacitance | Crss | | 54 | | pF | VGS=0V, VDS=50V, f=1MHz | 2 |+| Gate total charge | QG | | 169 | | nC | VGS=10V, VDS=50V, ID=90A, f=1MHz | 2 |+| Transconductance | gfs | | 111 | | S | VDS=5V, ID=90A | 2 |+| Body diode forward voltage | VSD | | 0.9 | 1.4 | V | VGS=0V, ISD=90A | 3 |+| Body diode reverse recovery time | trr | | 101 | | ns | IF=90A, dI/dt=100A/µs | 3 |+| Body diode reverse recovery charge | Qrr | | 338 | | nC | IF=90A, dI/dt=100A/µs | 3 |+| Thermal resistance, junction to case | RthJC | | | 0.55 | °C/W | | 2 |+| Thermal resistance, junction to ambient (min. footprint) | RthJA | | | 62 | °C/W | min. footprint | 2 |+| Thermal resistance, junction to ambient (min. footprint) | RthJA | | | 100 | °C/W | min. footprint | 2 |+ ## CAD (KiCad official) - Symbol: `CRST030N10N`
page.json+320−1@@ -148,6 +148,325 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "eec133b3c8621384",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current (TC = 25°C, silicon limit)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 207,+ "conditions": "TC = 25°C (Silicon limit)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current (TC = 25°C, package limit)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "TC = 25°C (Package limit)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current (TC = 100°C, silicon limit)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 131,+ "conditions": "TC = 100°C (Silicon limit)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 720,+ "conditions": "TC = 25°C, tp limited by Tjmax",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 529,+ "conditions": "L=0.5mH, Rg=25Ω",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 227,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature",+ "symbol": "Tj, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.2,+ "typ": 3,+ "max": 3.8,+ "conditions": "VDS=VGS, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.05,+ "max": 1,+ "conditions": "VDS=100V, VGS=0V, Tj=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS=100V, VGS=0V, Tj=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": 10,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 2.5,+ "max": 3,+ "conditions": "VGS=10V, ID=90A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.8,+ "max": null,+ "conditions": "VGS=0V, VDS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 11355,+ "max": null,+ "conditions": "VGS=0V, VDS=50V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1446,+ "max": null,+ "conditions": "VGS=0V, VDS=50V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 54,+ "max": null,+ "conditions": "VGS=0V, VDS=50V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate total charge",+ "symbol": "QG",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 169,+ "max": null,+ "conditions": "VGS=10V, VDS=50V, ID=90A, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 111,+ "max": null,+ "conditions": "VDS=5V, ID=90A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.9,+ "max": 1.4,+ "conditions": "VGS=0V, ISD=90A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 101,+ "max": null,+ "conditions": "IF=90A, dI/dt=100A/µs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 338,+ "max": null,+ "conditions": "IF=90A, dI/dt=100A/µs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.55,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to ambient (min. footprint)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "min. footprint",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to ambient (min. footprint)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "min. footprint",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +508,4 @@ "visibility": { "public": true }-}+}