component

CL10A226MP8NUNE

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Samsung Electro-Mechanics Multilayer Ceramic Capacitors MLCC - SMD/SMT, 0603. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.

componentcapacitorscl10a226mp8nunefactory-2.0.0extractor-text

Verified CL10A226MP8NUNE

by Ray · last 11 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

11 Nov 2026RayPublished by the parts factory: tier lcsc, 2 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: CL10A226MP8NUNE · 0603 · 2 pins
  • ✓copper: 2 copper pads, none touching another net
  • ✓datasheet: unpolarised two-terminal part: pins 1 and 2 by library convention, no names to check
  • •distributor (warn): no ['lcsc'] number
  • ✓family: C_0603_1608Metric
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-gza9z2vg/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • ✓package_fit: height within the datasheet's package drawing (datasheet p.1)
  • ✓pads: 2 pins = 2 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 2 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 16 kB, viewers/symbol.html 6 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ cl10a226mp8nune.kicad_sym✓ cl10a226mp8nune.kicad_mod✓ cl10a226mp8nune.step
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← Commit history

cl10a226mp8nune: effective capacitance under DC bias to rated voltage, from Samsung's characteristic data

Ray ·afd356ea0c · ·parent c8ce896
2 files changed +153−1
package.json+80page.json+73−1
package.json+80
@@ -166,5 +166,85 @@         "by": "factory/package_fit.py"       }     }+  },+  "metadata": {+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "rows": [+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 13.293,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 2.5 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -39.6 % from 22 uF nominal; linear between the maker's points at 2.4636 and 2.58437 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 10.456,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 3.3 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -52.5 % from 22 uF nominal; linear between the maker's points at 3.24647 and 3.3368 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 6.888,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 5 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -68.7 % from 22 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 5.586,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 6 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -74.6 % from 22 uF nominal; linear between the maker's points at 5.87115 and 6.0096 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 3.884,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 8 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -82.3 % from 22 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 2.865,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 10 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -87.0 % from 22 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        }+      ]+    }   } }
page.json+73−1
@@ -231,6 +231,78 @@           "conditions": "catalog attribute (LCSC C86295)",           "source_page": null,           "source": "catalog"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 13.293,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 2.5 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -39.6 % from 22 uF nominal; linear between the maker's points at 2.4636 and 2.58437 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 10.456,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 3.3 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -52.5 % from 22 uF nominal; linear between the maker's points at 3.24647 and 3.3368 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 6.888,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 5 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -68.7 % from 22 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 5.586,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 6 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -74.6 % from 22 uF nominal; linear between the maker's points at 5.87115 and 6.0096 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 3.884,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 8 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -82.3 % from 22 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 2.865,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 10 V, 25 C, LCR meter, 0.12kHz, 0.5Vrms (the maker's own condition); dC -87.0 % from 22 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A226MP8NUN# (product.samsungsem.com/mlcc/CL10A226MP8NUN.do), read 2026-11-11"         }       ]     }@@ -274,4 +346,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}