component
CL10A106MA8NRNC - Multilayer Ceramic Capacitor
Public Made by Adomby adom
10uF 25V X5R ±20%
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cl10a106ma8nrnc: effective capacitance under DC bias to rated voltage, from Samsung's characteristic data
2 files changed
+265−1
package.json+132@@ -125,6 +125,138 @@ "conditions": "Rated Voltage 25 V (code A)", "source_page": 1, "source": "datasheet"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 7.741,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 2.5 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -22.6 % from 10 uF nominal; linear between the maker's points at 2.4636 and 2.58437 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 6.602,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 3.3 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -34.0 % from 10 uF nominal; linear between the maker's points at 3.24647 and 3.3368 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 4.715,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 5 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -52.8 % from 10 uF nominal; a maker data point",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 3.926,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 6 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -60.7 % from 10 uF nominal; linear between the maker's points at 5.87115 and 6.0096 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 2.847,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 8 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -71.5 % from 10 uF nominal; a maker data point",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 2.168,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 10 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -78.3 % from 10 uF nominal; a maker data point",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 1.767,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 12 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -82.3 % from 10 uF nominal; linear between the maker's points at 11.968 and 12.5625 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 1.297,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 15 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -87.0 % from 10 uF nominal; linear between the maker's points at 14.544 and 15.2605 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 1.029,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 18 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -89.7 % from 10 uF nominal; linear between the maker's points at 17.608 and 18.4795 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 0.921,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 20 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -90.8 % from 10 uF nominal; linear between the maker's points at 19.384 and 20.3125 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 0.69,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 25 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -93.1 % from 10 uF nominal; a maker data point",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11" } ] }
page.json+133−1@@ -125,6 +125,138 @@ "conditions": "Rated Voltage 25 V (code A)", "source_page": 1, "source": "datasheet"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 7.741,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 2.5 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -22.6 % from 10 uF nominal; linear between the maker's points at 2.4636 and 2.58437 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 6.602,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 3.3 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -34.0 % from 10 uF nominal; linear between the maker's points at 3.24647 and 3.3368 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 4.715,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 5 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -52.8 % from 10 uF nominal; a maker data point",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 3.926,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 6 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -60.7 % from 10 uF nominal; linear between the maker's points at 5.87115 and 6.0096 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 2.847,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 8 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -71.5 % from 10 uF nominal; a maker data point",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 2.168,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 10 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -78.3 % from 10 uF nominal; a maker data point",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 1.767,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 12 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -82.3 % from 10 uF nominal; linear between the maker's points at 11.968 and 12.5625 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 1.297,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 15 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -87.0 % from 10 uF nominal; linear between the maker's points at 14.544 and 15.2605 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 1.029,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 18 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -89.7 % from 10 uF nominal; linear between the maker's points at 17.608 and 18.4795 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 0.921,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 20 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -90.8 % from 10 uF nominal; linear between the maker's points at 19.384 and 20.3125 V",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11"+ },+ {+ "kind": "electrical",+ "name": "Effective capacitance under DC bias",+ "symbol": "C_DCB",+ "min": null,+ "typ": 0.69,+ "max": null,+ "unit": "uF",+ "conditions": "DC bias 25 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -93.1 % from 10 uF nominal; a maker data point",+ "source_page": null,+ "source": "Samsung Electro-Mechanics characteristic data, DC Bias Characteristics series for CL10A106MA8NRN# (product.samsungsem.com/mlcc/CL10A106MA8NRN.do), read 2026-11-11" } ] }@@ -146,4 +278,4 @@ "name": "John Lauer", "email": "[email protected]" }-}+}