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CL05A105KA5NQNC

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Samsung Electro-Mechanics Multilayer Ceramic Capacitors MLCC - SMD/SMT, 0402. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.

componentcapacitorscl05a105ka5nqncfactory-2.0.0extractor-text

Verified CL05A105KA5NQNC

by Ray · last 11 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

11 Nov 2026RayPublished by the parts factory: tier lcsc, 2 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: CL05A105KA5NQNC · 0402 · 2 pins
  • ✓copper: 2 copper pads, none touching another net
  • ✓datasheet: two-terminal part whose datasheet prints no pin numbers: pins 1 and 2 by library convention, no names to check
  • •distributor (warn): no ['lcsc'] number
  • ✓family: C_0402_1005Metric
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-vikwggbn/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • ✓package_fit: height within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 2 pins = 2 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 2 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 15 kB, viewers/symbol.html 6 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ cl05a105ka5nqnc.kicad_sym✓ cl05a105ka5nqnc.kicad_mod✓ cl05a105ka5nqnc.step
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cl05a105ka5nqnc: DC-bias capacitance to 25 V and ESR vs frequency from Samsung's characteristic data

Ray ·a143c9ec93 · ·parent f539508
2 files changed +369−1
package.json+188page.json+181−1
package.json+188
@@ -166,5 +166,193 @@         "by": "factory/package_fit.py"       }     }+  },+  "metadata": {+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "rows": [+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.824,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 2.5 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -17.6 % from 1 uF nominal; linear between the maker's points at 2.4636 and 2.58437 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.729,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 3.3 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -27.1 % from 1 uF nominal; linear between the maker's points at 3.24647 and 3.3368 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.552,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 5 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -44.8 % from 1 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.47,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 6 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -53.0 % from 1 uF nominal; linear between the maker's points at 5.87115 and 6.0096 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.348,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 8 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -65.2 % from 1 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.265,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 10 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -73.5 % from 1 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.21,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 12 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -79.0 % from 1 uF nominal; linear between the maker's points at 11.928 and 12.2073 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.155,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 15 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -84.5 % from 1 uF nominal; linear between the maker's points at 14.8818 and 15.252 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.121,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 18 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -87.9 % from 1 uF nominal; linear between the maker's points at 17.9062 and 18.304 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.106,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 20 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -89.4 % from 1 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.082,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 25 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -91.8 % from 1 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "ESR vs frequency",+          "symbol": "ESR",+          "min": null,+          "typ": 0.40121,+          "max": null,+          "unit": "ohm",+          "conditions": "10 kHz, 0 V DC, 25 C; log-log between the maker's adjacent points",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, Impedance / ESR series"+        },+        {+          "kind": "electrical",+          "name": "ESR vs frequency",+          "symbol": "ESR",+          "min": null,+          "typ": 0.04772,+          "max": null,+          "unit": "ohm",+          "conditions": "100 kHz, 0 V DC, 25 C; log-log between the maker's adjacent points",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, Impedance / ESR series"+        },+        {+          "kind": "electrical",+          "name": "ESR vs frequency",+          "symbol": "ESR",+          "min": null,+          "typ": 0.01059,+          "max": null,+          "unit": "ohm",+          "conditions": "1 MHz, 0 V DC, 25 C; log-log between the maker's adjacent points",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, Impedance / ESR series"+        },+        {+          "kind": "electrical",+          "name": "ESR minimum (self-resonance)",+          "symbol": "ESR",+          "min": null,+          "typ": 0.00752,+          "max": null,+          "unit": "ohm",+          "conditions": "minimum of the maker's ESR series at 3.79 MHz (a maker data point)",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, Impedance / ESR series"+        }+      ]+    }   } }
page.json+181−1
@@ -231,6 +231,186 @@           "conditions": "catalog attribute (LCSC C52923)",           "source_page": null,           "source": "catalog"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.824,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 2.5 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -17.6 % from 1 uF nominal; linear between the maker's points at 2.4636 and 2.58437 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.729,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 3.3 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -27.1 % from 1 uF nominal; linear between the maker's points at 3.24647 and 3.3368 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.552,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 5 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -44.8 % from 1 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.47,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 6 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -53.0 % from 1 uF nominal; linear between the maker's points at 5.87115 and 6.0096 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.348,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 8 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -65.2 % from 1 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.265,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 10 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -73.5 % from 1 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.21,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 12 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -79.0 % from 1 uF nominal; linear between the maker's points at 11.928 and 12.2073 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.155,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 15 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -84.5 % from 1 uF nominal; linear between the maker's points at 14.8818 and 15.252 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.121,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 18 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -87.9 % from 1 uF nominal; linear between the maker's points at 17.9062 and 18.304 V",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.106,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 20 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -89.4 % from 1 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "Effective capacitance under DC bias",+          "symbol": "C_DCB",+          "min": null,+          "typ": 0.082,+          "max": null,+          "unit": "uF",+          "conditions": "DC bias 25 V, 25 C, LCR meter, 1kHz, 1Vrms (the maker's own condition); dC -91.8 % from 1 uF nominal; a maker data point",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, DC Bias Characteristics"+        },+        {+          "kind": "electrical",+          "name": "ESR vs frequency",+          "symbol": "ESR",+          "min": null,+          "typ": 0.40121,+          "max": null,+          "unit": "ohm",+          "conditions": "10 kHz, 0 V DC, 25 C; log-log between the maker's adjacent points",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, Impedance / ESR series"+        },+        {+          "kind": "electrical",+          "name": "ESR vs frequency",+          "symbol": "ESR",+          "min": null,+          "typ": 0.04772,+          "max": null,+          "unit": "ohm",+          "conditions": "100 kHz, 0 V DC, 25 C; log-log between the maker's adjacent points",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, Impedance / ESR series"+        },+        {+          "kind": "electrical",+          "name": "ESR vs frequency",+          "symbol": "ESR",+          "min": null,+          "typ": 0.01059,+          "max": null,+          "unit": "ohm",+          "conditions": "1 MHz, 0 V DC, 25 C; log-log between the maker's adjacent points",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, Impedance / ESR series"+        },+        {+          "kind": "electrical",+          "name": "ESR minimum (self-resonance)",+          "symbol": "ESR",+          "min": null,+          "typ": 0.00752,+          "max": null,+          "unit": "ohm",+          "conditions": "minimum of the maker's ESR series at 3.79 MHz (a maker data point)",+          "source_page": null,+          "source": "Samsung Electro-Mechanics characteristic data for CL05A105KA5NQN# (product.samsungsem.com/mlcc/CL05A105KA5NQN.do), read 2026-11-11, Impedance / ESR series"         }       ]     }@@ -274,4 +454,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}