← Commit history

cjpf04n65: factory component page (tier=lcsc)

Ray ·652c13540f · ·parent 040cd84
1 file changed +248−27
page.json+248−27
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "cjpf04n65",+  "title": "CJPF04N65",+  "brief": "Changjiang Electronics Tech (CJ) MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Changjiang Electronics Tech (CJ) MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "cjpf04n65.kicad_sym",-    "cjpf04n65.kicad_mod",-    "cjpf04n65.glb",-    "cjpf04n65.step",-    "cjpf04n65.lbr",-    "docs/hero.png",-    "docs/cjpf04n65-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "cjpf04n65-hero.glb",-    "cjpf04n65-hero.overlay.json"-  ],   "component": {     "mpn": "CJPF04N65",     "manufacturer": "Changjiang Electronics Tech (CJ)",@@ -173,9 +156,247 @@       }     }   },-  "visibility": "private",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "Changjiang Electronics Tech (CJ)",+      "Package": "TO-220F",+      "Category": "Transistors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "5bf04fbece22f3d3a2aefc9dc6fdec97c82cc2faef896722b6b9b4f4eb9ccc92",+      "rows": [+        {+          "name": "Drain-Source Voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 650,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 4,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 16,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single Pulsed Avalanche Energy (note 1)",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 280,+          "conditions": "Note 1: L=30mH, IL=4 A, VDD=100V, RG=25Ω, Starting TJ=25℃",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 2,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance from Junction to Ambient",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": null,+          "max": 62.5,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating and Storage Temperature Range",+          "symbol": "TJ, TSTG",+          "kind": "absolute_maximum",+          "unit": "℃",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum lead temperature for soldering purposes",+          "symbol": "TL",+          "kind": "absolute_maximum",+          "unit": "℃",+          "min": null,+          "typ": null,+          "max": 260,+          "conditions": "1/8 inch from case for 5 seconds",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain-source breakdown voltage",+          "symbol": "V(BR)DSS",+          "kind": "electrical",+          "unit": "V",+          "min": 650,+          "typ": null,+          "max": null,+          "conditions": "VGS = 0V, ID =250µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source diode forward voltage (note 2)",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.5,+          "conditions": "VGS = 0V, IS =4.0A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage drain current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 25,+          "conditions": "VDS =600V, VGS =0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-body leakage current (note 2)",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VDS =0V, VGS =±30V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-threshold voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 2,+          "typ": 3.5,+          "max": 4,+          "conditions": "VDS =VGS, ID =250µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Static drain-source on-resistance (note 2)",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 2.5,+          "max": 3,+          "conditions": "VGS =10V, ID =2.0A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total gate charge",+          "symbol": "Qg",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 5,+          "max": 10,+          "conditions": "VDS =480V, VGS =10V, ID =4.0A",+          "source_page": 2,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "cjpf04n65"+  ],+  "discovery_pitch": "CJPF04N65 (Changjiang Electronics Tech (CJ)) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {-    "name": "Ray"-  }-}\ No newline at end of file+    "name": "Ray",+    "email": "[email protected]"+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "cjpf04n65.kicad_sym",+    "cjpf04n65.kicad_mod",+    "cjpf04n65.glb",+    "cjpf04n65.step",+    "cjpf04n65.lbr",+    "docs/hero.png",+    "docs/cjpf04n65-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "cjpf04n65-hero.glb",+    "cjpf04n65-hero.overlay.json"+  ]+}