component
CJ3400A
Public Made by Adomby adom
Changjing MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
cj3400a: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ CJ3400A from Changjing, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 30 | V | | 1 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current | ID | | | 5.8 | A | | 1 |+| Drain Current-Pulsed | IDM | | | 30 | A | note 1 | 1 |+| Power Dissipation | PD | | | 400 | mW | | 1 |+| Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 313 | ℃/W | note 2: Surface Mounted on FR4 Board, t < 5 sec | 1 |+| Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | VGS = 0V, ID =250µA | 2 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =24V,VGS = 0V | 2 |+| Gate-source leakage current | IGSS | -100 | | 100 | nA | VGS =±12V, VDS = 0V | 2 |+| Drain-source on-resistance | RDS(on) | | 29 | 32 | mΩ | VGS =10V, ID =5.8A | 2 |+| Drain-source on-resistance | RDS(on) | | 32 | 38 | mΩ | VGS =4.5V, ID=5A | 2 |+| Drain-source on-resistance | RDS(on) | | 40 | 45 | mΩ | VGS =2.5V,ID=4A | 2 |+| Gate threshold voltage | VGS(th) | 0.7 | | 1.4 | V | VDS =VGS, ID =250µA | 2 |+| Diode forward voltage | VSD | | | 1 | V | IS=1A,VGS=0V | 2 |+ ## CAD (KiCad official) - Symbol: `CJ3400A`
page.json+200−1@@ -145,6 +145,205 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "27836f4d68a7883e",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 400,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 313,+ "conditions": "note 2: Surface Mounted on FR4 Board, t < 5 sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS =24V,VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS =±12V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 29,+ "max": 32,+ "conditions": "VGS =10V, ID =5.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 32,+ "max": 38,+ "conditions": "VGS =4.5V, ID=5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 40,+ "max": 45,+ "conditions": "VGS =2.5V,ID=4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.7,+ "typ": null,+ "max": 1.4,+ "conditions": "VDS =VGS, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "IS=1A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -186,4 +385,4 @@ "visibility": { "public": true }-}+}