component
C3M0021120K
Public Made by Adomby adom
Wolfspeed Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,7 +32,7 @@ "number": "1", "name": "D", "type": "passive",- "description": "Drain. 1200 V max drain-source voltage (V_DS_max). Continuous drain current 100 A at T_C=25\u00b0C (74 A at T_C=100\u00b0C). Electrically connected to the tab (pin 5) for heatsinking. R_DS(on) typ 21 m\u03a9 at V_GS=15 V, I_D=50 A."+ "description": "Drain. 1200 V max drain-source voltage (V_DS_max). Continuous drain current 100 A at T_C=25°C (74 A at T_C=100°C). Electrically connected to the tab (pin 5) for heatsinking. R_DS(on) typ 21 mΩ at V_GS=15 V, I_D=50 A." }, { "number": "2",@@ -50,13 +50,13 @@ "number": "4", "name": "G", "type": "input",- "description": "Gate. Recommended drive V_GS = -4 V / +15 V (V_GS_max dynamic -8/+19 V, static -4/+15 V). Gate threshold V_GS(th) typ 2.5 V. Total gate charge Q_g typ 162 nC; internal gate resistance R_G(int) typ 3.3 \u03a9."+ "description": "Gate. Recommended drive V_GS = -4 V / +15 V (V_GS_max dynamic -8/+19 V, static -4/+15 V). Gate threshold V_GS(th) typ 2.5 V. Total gate charge Q_g typ 162 nC; internal gate resistance R_G(int) typ 3.3 Ω." }, { "number": "5", "name": "D", "type": "passive",- "description": "Drain (metal tab). Same net as pin 1; provides the thermal / mechanical mounting surface (R_\u03b8JC typ 0.32 \u00b0C/W). Must be treated as electrically live at drain potential (up to 1200 V)."+ "description": "Drain (metal tab). Same net as pin 1; provides the thermal / mechanical mounting surface (R_θJC typ 0.32 °C/W). Must be treated as electrically live at drain potential (up to 1200 V)." } ], "provenance": {@@ -126,5 +126,8 @@ "docs/c3m0021120k-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }