component
C3M0021120K
Public Made by Adomby adom
Wolfspeed Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+104−8@@ -1,13 +1,114 @@ {+ "schema_version": 1,+ "type": "component", "slug": "c3m0021120k",+ "title": "C3M0021120K",+ "brief": "Wolfspeed Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "Wolfspeed Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "silicon carbide (sic) devices", "c3m0021120k" ],+ "component": {+ "mpn": "C3M0021120K",+ "manufacturer": "Wolfspeed",+ "package": "TO-247-4",+ "pin_count": 5,+ "category": "Silicon Carbide (SiC) Devices",+ "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603168924103942144",+ "parts": {+ "symbol": "c3m0021120k.kicad_sym",+ "footprint": "c3m0021120k.kicad_mod",+ "model_3d": "c3m0021120k.glb",+ "model_3d_step": "c3m0021120k.step",+ "lbr": "c3m0021120k.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "D",+ "type": "passive",+ "description": "Drain. 1200 V max drain-source voltage (V_DS_max). Continuous drain current 100 A at T_C=25\u00b0C (74 A at T_C=100\u00b0C). Electrically connected to the tab (pin 5) for heatsinking. R_DS(on) typ 21 m\u03a9 at V_GS=15 V, I_D=50 A."+ },+ {+ "number": "2",+ "name": "S",+ "type": "passive",+ "description": "Power Source (main power current path). Carries the drain-source current back to the load; typically bonded to the high-current source terminal. Should not be used as the gate-driver return in this 4-lead package (use pin 3 for that)."+ },+ {+ "number": "3",+ "name": "SS",+ "type": "passive",+ "description": "Driver Source (Kelvin source). Low-inductance sense connection to the source used as the gate-driver return reference to eliminate common-source inductance and reduce switching losses / gate ringing."+ },+ {+ "number": "4",+ "name": "G",+ "type": "input",+ "description": "Gate. Recommended drive V_GS = -4 V / +15 V (V_GS_max dynamic -8/+19 V, static -4/+15 V). Gate threshold V_GS(th) typ 2.5 V. Total gate charge Q_g typ 162 nC; internal gate resistance R_G(int) typ 3.3 \u03a9."+ },+ {+ "number": "5",+ "name": "D",+ "type": "passive",+ "description": "Drain (metal tab). Same net as pin 1; provides the thermal / mechanical mounting surface (R_\u03b8JC typ 0.32 \u00b0C/W). Must be treated as electrically live at drain potential (up to 1200 V)."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603168924103942144",+ "pages": 12,+ "sha256": "cdd5e1f0529f7383",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 5,+ "described": 5,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "Wolfspeed",+ "Package": "TO-247-4",+ "Category": "Silicon Carbide (SiC) Devices",+ "Pins": "5"+ }+ },+ "variants": [+ {+ "mpn": "C3M0021120K",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "c3m0021120k"+ ],+ "discovery_pitch": "C3M0021120K (Wolfspeed) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +126,5 @@ "docs/c3m0021120k-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }