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Initial commit: component/bul49d

Ray ·5e42e9719c ·1mo ago
2 files changed +152
README.mdadded+39
@@ -0,0 +1,39 @@+# BUL49D++**STMicroelectronics** · Bipolar (BJT) · TO-220++BUL49D from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | B | input | Base terminal of the NPN power transistor; base current IB is rated up to 2 A continuous and 4 A peak (tP < 5 ms). |+| 2 | C | passive | Collector terminal of the NPN power transistor; collector-emitter voltage VCES (VBE=0) is rated up to 850 V and collector current IC up to 5 A (10 A peak, tP < 5 ms). |+| 3 | E | passive | Emitter terminal of the NPN power transistor, internally connected to an integral flyback (freewheeling) diode; emitter-base breakdown voltage V(BR)EBO is 10 to 18 V. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | STMicroelectronics |+| Package | TO-220 |+| Category | Transistors/Thyristors |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `BUL49D`+- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`+- 3D model: TO-220 (KiCad packages3D, STEP)+- 3D model files: `bul49d-etched.step` / `bul49d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bul49d.step` / `bul49d.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/bul49d.pdf) (15 pp, sha256 `415eee02a8ac53f9`, retrieved 2026-09-24, tier: manufacturer)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-sonnet-5` (text+vision), consensus `claude-opus-4-8` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/bul49d-datasheet.pdf)
page.jsonadded+113
@@ -0,0 +1,113 @@+{+  "slug": "bul49d",+  "version": "0.1.0",+  "type": "component",+  "description": "STMicroelectronics Bipolar (BJT), TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "tags": [+    "component",+    "transistors-thyristors",+    "bul49d",+    "factory-2.0.0",+    "extractor-text"+  ],+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "bul49d.kicad_sym",+    "bul49d.kicad_mod",+    "bul49d.glb",+    "bul49d.step",+    "bul49d.lbr",+    "docs/hero.png",+    "docs/bul49d-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html"+  ],+  "component": {+    "mpn": "BUL49D",+    "manufacturer": "STMicroelectronics",+    "package": "TO-220",+    "pin_count": 3,+    "category": "Transistors/Thyristors",+    "subcategory": "Bipolar (BJT)",+    "datasheet": "https://www.st.com/resource/en/datasheet/bul49d.pdf",+    "parts": {+      "symbol": "bul49d.kicad_sym",+      "footprint": "bul49d.kicad_mod",+      "model_3d": "bul49d-etched.glb",+      "model_3d_plain": "bul49d.glb",+      "model_3d_step": "bul49d-etched.step",+      "model_3d_step_plain": "bul49d.step",+      "lbr": "bul49d.lbr"+    },+    "distributor_links": {+      "lcsc": "C3200841"+    },+    "pins": [+      {+        "number": "1",+        "name": "B",+        "type": "input",+        "description": "Base terminal of the NPN power transistor; base current IB is rated up to 2 A continuous and 4 A peak (tP < 5 ms)."+      },+      {+        "number": "2",+        "name": "C",+        "type": "passive",+        "description": "Collector terminal of the NPN power transistor; collector-emitter voltage VCES (VBE=0) is rated up to 850 V and collector current IC up to 5 A (10 A peak, tP < 5 ms)."+      },+      {+        "number": "3",+        "name": "E",+        "type": "passive",+        "description": "Emitter terminal of the NPN power transistor, internally connected to an integral flyback (freewheeling) diode; emitter-base breakdown voltage V(BR)EBO is 10 to 18 V."+      }+    ],+    "provenance": {+      "extractor": "extract_pins 0.2",+      "factory_chain": {+        "factory": "2.0.0",+        "extractor": "extract_pins 0.2",+        "primary_model": "claude-sonnet-5",+        "primary_mode": "text+vision",+        "consensus_model": "claude-opus-4-8",+        "consensus": "agreed",+        "guards": "pin_guards 0.1: passed",+        "guard_notes": [+          "vision extraction: provenance cannot be text-verified; needs consensus"+        ],+        "pages_sent": 15,+        "cost_usd": 0.248,+        "at": "2026-09-24T08:30:12"+      },+      "datasheet": {+        "url": "https://www.st.com/resource/en/datasheet/bul49d.pdf",+        "pages": 15,+        "sha256": "415eee02a8ac53f9",+        "source_tier": "mfr"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 3,+        "described": 3,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "visibility": "public",+  "org": "adom",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  }+}\ No newline at end of file