component
BUL128D-B
Public Made by Adomby adom
STMicroelectronics Bipolar (BJT), TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+39@@ -0,0 +1,39 @@+# BUL128D-B++**STMicroelectronics** · Bipolar (BJT) · TO-220++BUL128D-B from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | B | input | Base of the NPN transistor; absolute maximum base current is 2 A (4 A peak, tp < 5 ms). |+| 2 | C | passive | Collector with integrated antiparallel collector-emitter diode; VCES 700 V, VCEO 400 V, IC 4 A (8 A peak, tp < 5 ms). |+| 3 | E | passive | Emitter of the NPN transistor; the antiparallel diode is connected between emitter and collector, and V(BR)EBO is 9 V min to 18 V max at IE = 10 mA. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | STMicroelectronics |+| Package | TO-220 |+| Category | Transistors/Thyristors |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `BUL128D-B`+- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`+- 3D model: TO-220 (KiCad packages3D, STEP)+- 3D model files: `bul128d-b-etched.step` / `bul128d-b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bul128d-b.step` / `bul128d-b.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/bul128d-b.pdf) (8 pp, sha256 `0f91b4f2f3241156`, retrieved 2026-10-05, tier: manufacturer)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/bul128d-b-datasheet.pdf)
page.jsonadded+131@@ -0,0 +1,131 @@+{+ "slug": "bul128d-b",+ "version": "0.1.0",+ "type": "component",+ "description": "STMicroelectronics Bipolar (BJT), TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "transistors-thyristors",+ "bul128d-b",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "bul128d-b.kicad_sym",+ "bul128d-b.kicad_mod",+ "bul128d-b.glb",+ "bul128d-b.step",+ "bul128d-b.lbr",+ "docs/hero.png",+ "docs/bul128d-b-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html",+ "bul128d-b-hero.glb",+ "bul128d-b-hero.overlay.json"+ ],+ "component": {+ "mpn": "BUL128D-B",+ "manufacturer": "STMicroelectronics",+ "package": "TO-220",+ "pin_count": 3,+ "category": "Transistors/Thyristors",+ "subcategory": "Bipolar (BJT)",+ "datasheet": "https://www.st.com/resource/en/datasheet/bul128d-b.pdf",+ "parts": {+ "symbol": "bul128d-b.kicad_sym",+ "footprint": "bul128d-b.kicad_mod",+ "model_3d": "bul128d-b-hero.glb",+ "model_3d_plain": "bul128d-b.glb",+ "model_3d_step": "bul128d-b-etched.step",+ "model_3d_step_plain": "bul128d-b.step",+ "lbr": "bul128d-b.lbr"+ },+ "distributor_links": {+ "lcsc": 2971460,+ "digikey": "497-12755-5-ND",+ "mouser": "511-BUL128D-B"+ },+ "distributor_check": {+ "checked_at": "2026-10-05T20:30:17Z",+ "source": "Component Ocean /api/assign-pns",+ "digikey": {+ "pn": "497-12755-5-ND",+ "status": "found",+ "lifecycle": "Obsolete"+ },+ "mouser": {+ "pn": "511-BUL128D-B",+ "status": "found",+ "lifecycle": "End of Life"+ }+ },+ "pins": [+ {+ "number": "1",+ "name": "B",+ "type": "input",+ "description": "Base of the NPN transistor; absolute maximum base current is 2 A (4 A peak, tp < 5 ms)."+ },+ {+ "number": "2",+ "name": "C",+ "type": "passive",+ "description": "Collector with integrated antiparallel collector-emitter diode; VCES 700 V, VCEO 400 V, IC 4 A (8 A peak, tp < 5 ms)."+ },+ {+ "number": "3",+ "name": "E",+ "type": "passive",+ "description": "Emitter of the NPN transistor; the antiparallel diode is connected between emitter and collector, and V(BR)EBO is 9 V min to 18 V max at IE = 10 mA."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.3",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.3",+ "primary_model": "claude-sonnet-5-5",+ "primary_mode": "text+vision",+ "consensus_model": "claude-opus-5-5",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "vision extraction: provenance cannot be text-verified; needs consensus"+ ],+ "pages_sent": 8,+ "cost_usd": 0.2041,+ "at": "2026-10-05T20:30:04"+ },+ "datasheet": {+ "url": "https://www.st.com/resource/en/datasheet/bul128d-b.pdf",+ "pages": 8,+ "sha256": "0f91b4f2f3241156",+ "source_tier": "mfr"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 3,+ "described": 3,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}