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BUK9575-55A-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+8−5@@ -32,25 +32,25 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Logic-level MOSFET gate control input. VGS(th) 1.0-2.5 V; maximum gate-source voltage \u00b120 V. RDS(on) = 24 m\u03a9 at VGS=10 V, 28 m\u03a9 at VGS=4.5 V."+ "description": "Gate. Logic-level MOSFET gate control input. VGS(th) 1.0-2.5 V; maximum gate-source voltage ±20 V. RDS(on) = 24 mΩ at VGS=10 V, 28 mΩ at VGS=4.5 V." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. MOSFET drain terminal, VDS(max) = 60 V, continuous drain current up to 50 A at TC=25 \u00b0C (36 A at TC=100 \u00b0C), pulsed ID = 200 A. Internally connected to the tab."+ "description": "Drain. MOSFET drain terminal, VDS(max) = 60 V, continuous drain current up to 50 A at TC=25 °C (36 A at TC=100 °C), pulsed ID = 200 A. Internally connected to the tab." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. MOSFET source terminal; body diode anode. Continuous source-drain diode current 50 A, body diode voltage VSD \u2264 2.5 V at IS=51 A."+ "description": "Source. MOSFET source terminal; body diode anode. Continuous source-drain diode current 50 A, body diode voltage VSD ≤ 2.5 V at IS=51 A." }, { "number": "4", "name": "D", "type": "passive",- "description": "Drain (heatsink tab). Metal tab electrically connected to the drain; used for thermal dissipation with RthJC = 1.0 \u00b0C/W. Often soldered or bolted to a heatsink."+ "description": "Drain (heatsink tab). Metal tab electrically connected to the drain; used for thermal dissipation with RthJC = 1.0 °C/W. Often soldered or bolted to a heatsink." } ], "provenance": {@@ -115,5 +115,8 @@ "docs/buk9575-55a-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }