component
BTA16-800B
Public Made by Adomby adom
Slkor SLKORMICRO Elec Thyristors (SCR)/Modules, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bta16-800b: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
2 files changed
+300
README.md+29@@ -21,6 +21,35 @@ BTA16-800B from Slkor SLKORMICRO Elec, in a TO-220. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Repetitive Peak Off-State Voltage (BTA16-800) | VDRM/VRRM | | | 800 | V | | 1 |+| Repetitive Peak Off-State Current, Tc=25°C | IDRM | | | 5 | uA | Tc=25°C | 2 |+| Repetitive Peak Off-State Current, Tc=125°C | IDRM | | | 1 | mA | Tc=125°C | 2 |+| Repetitive Peak Reverse Current, Tc=25°C | IRRM | | | 5 | uA | Tc=25°C | 2 |+| Repetitive Peak Reverse Current, Tc=125°C | IRRM | | | 1 | mA | Tc=125°C | 2 |+| Gate trigger voltage | VGT | | | 1.5 | V | VD=12V, RL=30Ω | 2 |+| Gate trigger current, quadrants I, II, III (grade B) | IGT | | | 50 | mA | I,II,III VD=12V, RL=30Ω | 2 |+| Gate trigger current, quadrant IV (grade B) | IGT | | | 100 | mA | IV VD=12V, RL=30Ω | 2 |+| Holding current (grade B) | IH | | | 50 | mA | IT=0.2A | 2 |+| Gate non-trigger voltage | VGD | 0.2 | | | V | VD=VDRM, TJ=125°C, RL=3.3KΩ | 2 |+| Critical rate of rise of on-state current, quadrants I, II, III | di/dt | 50 | | | A/us | F=100Hz, IG=2xIGT, tr≤100ns | 2 |+| Critical rate of rise of on-state current, quadrant IV | di/dt | 10 | | | A/us | F=100Hz, IG=2xIGT, tr≤100ns | 2 |+| Critical rate of rise of commutation voltage (grade B) | dv/dt | 400 | | | V/us | TJ=125°C, VD=2/3VDRM, Gate open circuit | 2 |+| Forward on voltage | VTM | | 1.5 | | V | IT=23A, tp=380us | 2 |+| Junction temperature, operating | Tj | -40 | | 125 | °C | | 1 |+| Storage temperature | TSTG | -40 | | 150 | °C | | 1 |+| R.M.S on-state current | IT(RMS) | | | 16 | A | Tc=110°C | 1 |+| I²t for fusing | I²t | | | 144 | A²s | Tp=10ms | 1 |+| Average gate power dissipation | PG(AV) | | | 1 | W | Tj=125°C | 1 |+| Peak gate current | IGM | | | 4 | A | Tj=125°C | 1 |+| Thermal resistance junction to case | Rth(j-c) | | 2.1 | | °C/W | | 2 |+| Thermal resistance junction to ambient | Rth(j-a) | | 60 | | °C/W | | 2 |+ ## CAD (KiCad official) - Symbol: `BTA16-800B`
page.json+271@@ -135,6 +135,277 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "0dca8914fb69cf09",+ "rows": [+ {+ "name": "Repetitive Peak Off-State Voltage (BTA16-800)",+ "symbol": "VDRM/VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 800,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Peak Off-State Current, Tc=25°C",+ "symbol": "IDRM",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Peak Off-State Current, Tc=125°C",+ "symbol": "IDRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tc=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Peak Reverse Current, Tc=25°C",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Peak Reverse Current, Tc=125°C",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tc=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "VD=12V, RL=30Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current, quadrants I, II, III (grade B)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "I,II,III VD=12V, RL=30Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current, quadrant IV (grade B)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "IV VD=12V, RL=30Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current (grade B)",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IT=0.2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD=VDRM, TJ=125°C, RL=3.3KΩ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current, quadrants I, II, III",+ "symbol": "di/dt",+ "kind": "electrical",+ "unit": "A/us",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "F=100Hz, IG=2xIGT, tr≤100ns",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current, quadrant IV",+ "symbol": "di/dt",+ "kind": "electrical",+ "unit": "A/us",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "F=100Hz, IG=2xIGT, tr≤100ns",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of commutation voltage (grade B)",+ "symbol": "dv/dt",+ "kind": "electrical",+ "unit": "V/us",+ "min": 400,+ "typ": null,+ "max": null,+ "conditions": "TJ=125°C, VD=2/3VDRM, Gate open circuit",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VTM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.5,+ "max": null,+ "conditions": "IT=23A, tp=380us",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature, operating",+ "symbol": "Tj",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "R.M.S on-state current",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Tc=110°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "I²t for fusing",+ "symbol": "I²t",+ "kind": "absolute_maximum",+ "unit": "A²s",+ "min": null,+ "typ": null,+ "max": 144,+ "conditions": "Tp=10ms",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj=125°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "Tj=125°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to case",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 2.1,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 60,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],