component
BT134
Public Made by Adomby adom
JUXING Thyristors (SCR)/Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bt134: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -21,6 +21,38 @@ BT134 from JUXING, in a TO-252. Pinout and pin descriptions extracted from the m | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Repetitive peak off-state voltage (600E variant) | VDRM/VRRM | | | 600 | V | 600E variant | 1 |+| Repetitive peak off-state voltage (800E variant) | VDRM/VRRM | | | 800 | V | 800E variant | 1 |+| RMS on-state current | IT(RMS) | | | 2 | A | full sine wave | 1 |+| Non repetitive surge peak on-state current | ITSM | | | 10 | A | full sine wave, Tj=25℃, t=20ms | 1 |+| Peak gate current | IGM | | | 4 | A | | 1 |+| I2t for fusing | I2t | | | 0.5 | A2S | t=10ms | 1 |+| Average gate Power Dissipation | PG(AV) | | | 0.5 | W | Tj=125℃ | 1 |+| Peak gate Power | PGM | | | 5 | W | | 1 |+| Repetitive rate of rise of on-state current after triggering | Dit/dt | | | 50 | A/µs | | 1 |+| Junction Temperature | Tj | -40 | | 125 | ℃ | | 1 |+| Storage Temperature | Tstg | -40 | | 150 | ℃ | | 1 |+| Gate trigger current (quadrants Ⅰ, Ⅱ, Ⅲ) | IGT | | | 15 | mA | VD=12V;RL=100Ω; quadrants Ⅰ Ⅱ Ⅲ | 2 |+| Gate trigger current (quadrant Ⅳ) | IGT | | | 35 | mA | VD=12V;RL=100Ω; quadrant Ⅳ | 2 |+| Latching current (quadrants Ⅰ, Ⅱ, Ⅲ) | IL | | | 20 | mA | IG=1.2IGT; quadrants Ⅰ Ⅱ Ⅲ | 2 |+| Latching current (quadrant Ⅳ) | IL | | | 50 | mA | IG=1.2IGT; quadrant Ⅳ | 2 |+| Holding current | IH | | | 20 | mA | IT=0.5A | 2 |+| Peak forward on-state voltage | VTM | | | 1.4 | V | ITM=2A, Tj=25℃ | 2 |+| Gate trigger voltage (quadrants Ⅰ, Ⅱ, Ⅲ) | VGT | | | 1.5 | V | VD=12V;RL=100Ω; quadrants Ⅰ Ⅱ Ⅲ | 2 |+| Non-triggering gate voltage | VGD | | | 0.2 | V | VD=VDRM; Tj=125℃ | 2 |+| Off-state leakage current | ID | | 0.1 | 0.5 | mA | VD=VDRM(max); Tj=125℃ | 2 |+| Repetitive peak off-state current (critical rate of rise of off-state voltage) | dVD/dt | 500 | | | V/µs | VD=67%VDRM(max); Tj=125℃ | 2 |+| Maximum forward or reverse leakage current | IDRM/IRRM | | | 5 | µA | VD=VDRM/VRRM; Tj=25℃ | 2 |+| Maximum forward or reverse leakage current | IDRM/IRRM | | | 1 | mA | VD=VDRM/VRRM; Tj=125℃ | 2 |+| On-state threshold voltage | VT0 | | 0.92 | | V | Tj=125℃ | 2 |+| Thermal Resistance From Junction To Ambient | RθJA | | 70 | | ℃/W | | 1 |+ ## CAD (KiCad official) - Symbol: `BT134`
page.json+308−1@@ -148,6 +148,313 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "dbf735c4e4e68d69",+ "rows": [+ {+ "name": "Repetitive peak off-state voltage (600E variant)",+ "symbol": "VDRM/VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "600E variant",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state voltage (800E variant)",+ "symbol": "VDRM/VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 800,+ "conditions": "800E variant",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "RMS on-state current",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "full sine wave",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "full sine wave, Tj=25℃, t=20ms",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "I2t for fusing",+ "symbol": "I2t",+ "kind": "absolute_maximum",+ "unit": "A2S",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "t=10ms",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Average gate Power Dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "Tj=125℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak gate Power",+ "symbol": "PGM",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive rate of rise of on-state current after triggering",+ "symbol": "Dit/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current (quadrants Ⅰ, Ⅱ, Ⅲ)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VD=12V;RL=100Ω; quadrants Ⅰ Ⅱ Ⅲ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current (quadrant Ⅳ)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "VD=12V;RL=100Ω; quadrant Ⅳ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current (quadrants Ⅰ, Ⅱ, Ⅲ)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "IG=1.2IGT; quadrants Ⅰ Ⅱ Ⅲ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current (quadrant Ⅳ)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG=1.2IGT; quadrant Ⅳ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "IT=0.5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak forward on-state voltage",+ "symbol": "VTM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.4,+ "conditions": "ITM=2A, Tj=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage (quadrants Ⅰ, Ⅱ, Ⅲ)",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "VD=12V;RL=100Ω; quadrants Ⅰ Ⅱ Ⅲ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non-triggering gate voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.2,+ "conditions": "VD=VDRM; Tj=125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Off-state leakage current",+ "symbol": "ID",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": 0.1,+ "max": 0.5,+ "conditions": "VD=VDRM(max); Tj=125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state current (critical rate of rise of off-state voltage)",+ "symbol": "dVD/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 500,+ "typ": null,+ "max": null,+ "conditions": "VD=67%VDRM(max); Tj=125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum forward or reverse leakage current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VD=VDRM/VRRM; Tj=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum forward or reverse leakage current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VD=VDRM/VRRM; Tj=125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state threshold voltage",+ "symbol": "VT0",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.92,+ "max": null,+ "conditions": "Tj=125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance From Junction To Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 70,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +496,4 @@ "visibility": { "public": true }-}+}