component
BSN20BKR
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bsn20bkr: specified limits as data (metadata.characteristics, 33 rows from the datasheet)
2 files changed
+443
README.md+40@@ -21,6 +21,46 @@ BSN20BKR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 60 | V | | 3 |+| Gate-source voltage | VGS | -20 | | 20 | V | Tj = 25 °C | 3 |+| Drain current | ID | | | 265 | mA | VGS = 10 V; Tamb = 25 °C [1] | 3 |+| Drain current | ID | | | 170 | mA | VGS = 10 V; Tamb = 100 °C [1] | 3 |+| Drain current | ID | | | 330 | mA | VGS = 10 V; Tsp = 25 °C | 3 |+| Peak drain current | IDM | | | 0.9 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |+| Total power dissipation | Ptot | | | 310 | mW | Tamb = 25 °C [2] | 3 |+| Total power dissipation | Ptot | | | 402 | mW | [1] | 3 |+| Total power dissipation | Ptot | | | 1672 | mW | Tsp = 25 °C | 3 |+| Junction temperature | Tj | -55 | | 150 | °C | | 3 |+| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |+| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |+| Source current (source-drain diode) | IS | | | 200 | mA | Tamb = 25 °C [1] | 3 |+| Thermal resistance from junction to ambient | Rth(j-a) | | 351 | 404 | K/W | in free air [1] | 4 |+| Thermal resistance from junction to ambient | Rth(j-a) | | 271 | 311 | K/W | [2] | 4 |+| Thermal resistance from junction to ambient | Rth(j-a) | | 210 | 241 | K/W | t ≤ 5 s [2] | 4 |+| Thermal resistance from junction to solder point | Rth(j-sp) | | 65 | 75 | K/W | | 4 |+| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |+| Gate-source threshold voltage | VGSth | 0.6 | 1 | 1.4 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |+| Drain leakage current | IDSS | | | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS | | | 10 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS | | | -10 | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS | | | 1 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS | | | -1 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS | | | 0.3 | µA | VGS = 5 V; VDS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS | | | -0.3 | µA | VGS = -5 V; VDS = 0 V; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon | | 2.1 | 2.8 | Ω | VGS = 10 V; ID = 200 mA; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon | | 4.3 | 5.7 | Ω | VGS = 10 V; ID = 200 mA; Tj = 150 °C | 6 |+| Drain-source on-state resistance | RDSon | | 2.2 | 3.2 | Ω | VGS = 5 V; ID = 200 mA; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon | | 2.6 | 4 | Ω | VGS = 2.5 V; ID = 75 mA; Tj = 25 °C | 6 |+| Output capacitance | Coss | | 3.1 | 10 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |+| Reverse transfer capacitance | Crss | | 2 | 7 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |+| Source-drain voltage | VSD | | 0.86 | 1.2 | V | IS = 200 mA; VGS = 0 V; Tj = 25 °C | 6 |+ ## CAD (KiCad official) - Symbol: `BSN20BKR`
page.json+403@@ -133,6 +133,409 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "995e2719cc48f1fb",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 265,+ "conditions": "VGS = 10 V; Tamb = 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 170,+ "conditions": "VGS = 10 V; Tamb = 100 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 330,+ "conditions": "VGS = 10 V; Tsp = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "Tamb = 25 °C; single pulse; tp ≤ 10 µs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 310,+ "conditions": "Tamb = 25 °C [2]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 402,+ "conditions": "[1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 1672,+ "conditions": "Tsp = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Ambient temperature",+ "symbol": "Tamb",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source current (source-drain diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Tamb = 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 351,+ "max": 404,+ "conditions": "in free air [1]",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 271,+ "max": 311,+ "conditions": "[2]",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 210,+ "max": 241,+ "conditions": "t ≤ 5 s [2]",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance from junction to solder point",+ "symbol": "Rth(j-sp)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 65,+ "max": 75,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "ID = 250 µA; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGSth",+ "kind": "electrical",+ "unit": "V",+ "min": 0.6,+ "typ": 1,+ "max": 1.4,+ "conditions": "ID = 250 µA; VDS = VGS; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain leakage current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 60 V; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VGS = 20 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VGS = -20 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 10 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VGS = -10 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 0.3,+ "conditions": "VGS = 5 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -0.3,+ "conditions": "VGS = -5 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.1,+ "max": 2.8,+ "conditions": "VGS = 10 V; ID = 200 mA; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 4.3,+ "max": 5.7,+ "conditions": "VGS = 10 V; ID = 200 mA; Tj = 150 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.2,+ "max": 3.2,+ "conditions": "VGS = 5 V; ID = 200 mA; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.6,+ "max": 4,+ "conditions": "VGS = 2.5 V; ID = 75 mA; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 3.1,+ "max": 10,+ "conditions": "VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2,+ "max": 7,+ "conditions": "VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Source-drain voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.86,+ "max": 1.2,+ "conditions": "IS = 200 mA; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ }+ ] } }, "variants": [],