component
BQ76200PWR
Public Made by Adomby adom
Texas Instruments Battery Management, TSSOP-16. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+10−7@@ -50,25 +50,25 @@ "number": "4", "name": "CHG_EN", "type": "input",- "description": "Charge FET enable. Digital input from AFE or MCU (VIL max 0.6 V, VIH min 1.2 V, 15 V absolute max). Internal ~1 M\u03a9 pull-down. Must be current limited (max 5 mA)."+ "description": "Charge FET enable. Digital input from AFE or MCU (VIL max 0.6 V, VIH min 1.2 V, 15 V absolute max). Internal ~1 MΩ pull-down. Must be current limited (max 5 mA)." }, { "number": "5", "name": "CP_EN", "type": "input",- "description": "Charge pump enable. Internally logic-ORed with CHG_EN and DSG_EN signals. Digital input (VIL max 0.6 V, VIH min 1.2 V, 15 V absolute max) with internal ~1 M\u03a9 pull-down."+ "description": "Charge pump enable. Internally logic-ORed with CHG_EN and DSG_EN signals. Digital input (VIL max 0.6 V, VIH min 1.2 V, 15 V absolute max) with internal ~1 MΩ pull-down." }, { "number": "6", "name": "DSG_EN", "type": "input",- "description": "Discharge FET enable. Digital input (VIL max 0.6 V, VIH min 1.2 V, 15 V absolute max) with internal ~1 M\u03a9 pull-down."+ "description": "Discharge FET enable. Digital input (VIL max 0.6 V, VIH min 1.2 V, 15 V absolute max) with internal ~1 MΩ pull-down." }, { "number": "7", "name": "PMON_EN", "type": "input",- "description": "Pack monitor enable. Enables the internal switch (typ 2.5 k\u03a9, 1.5-3.5 k\u03a9) between PACK and PACKDIV pins to allow pack-voltage sensing. Recommended to tie to ground if unused."+ "description": "Pack monitor enable. Enables the internal switch (typ 2.5 kΩ, 1.5-3.5 kΩ) between PACK and PACKDIV pins to allow pack-voltage sensing. Recommended to tie to ground if unused." }, { "number": "8",@@ -98,7 +98,7 @@ "number": "12", "name": "DSG", "type": "output",- "description": "Gate drive for discharge N-channel high-side FET. Gate drive voltage V(DSG)-V(PACK) typically 12 V (9-14 V) when DSG_EN=Hi. Driver on-resistance 3.5 k\u03a9 typ; off-resistance 1 k\u03a9 typ."+ "description": "Gate drive for discharge N-channel high-side FET. Gate drive voltage V(DSG)-V(PACK) typically 12 V (9-14 V) when DSG_EN=Hi. Driver on-resistance 3.5 kΩ typ; off-resistance 1 kΩ typ." }, { "number": "13",@@ -122,7 +122,7 @@ "number": "16", "name": "CHG", "type": "output",- "description": "Gate drive for charge N-channel high-side FET. Gate drive voltage V(CHG)-V(BAT) typically 12 V (9-14 V) when CHG_EN=Hi. Driver on-resistance 1.1 k\u03a9 typ; off-resistance 0.3 k\u03a9 typ."+ "description": "Gate drive for charge N-channel high-side FET. Gate drive voltage V(CHG)-V(BAT) typically 12 V (9-14 V) when CHG_EN=Hi. Driver on-resistance 1.1 kΩ typ; off-resistance 0.3 kΩ typ." } ], "provenance": {@@ -186,5 +186,8 @@ "docs/bq76200pwr-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }