component
BQ294522DRVT
Public Made by Adomby adom
Texas Instruments Battery Management, WSON-6-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+44@@ -0,0 +1,44 @@+# BQ294522DRVT++**Texas Instruments** · Battery Management · WSON-6-EP(2x2)++BQ294522DRVT from Texas Instruments, in a WSON-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | V3 | input | Analog sense input for the positive voltage of the third cell from the bottom of the stack; input leakage current ±0.1 µA max (0 °C to 60 °C), abs max V3-VSS = 30 V; for 2-series configuration, short to V2. |+| 2 | V2 | input | Analog sense input for the positive voltage of the second cell from the bottom of the stack; input leakage current ±0.1 µA max (0 °C to 60 °C), abs max V2-VSS = 30 V. |+| 3 | VSS | power_in | IC ground; electrically connected to the negative terminal of the lowest cell in the stack; must be connected to PWRPAD on PCB for proper operation. |+| 4 | V1 | input | Analog sense input for the positive voltage of the lowest cell in the stack; input leakage current ±0.1 µA max (0 °C to 60 °C), abs max V1-VSS = 30 V. |+| 5 | VDD | power_in | Unregulated power supply input for the IC; recommended operating range 3 V to 25 V, abs max VDD-VSS = 30 V; connect series resistor RVD (100 Ω-1 kΩ) and bypass capacitor CVD (0.1 µF) for noise filtering. |+| 6 | OUT | output | Active-high analog output drive for gate of external N-channel FET; VOUT ≥ 6 V at IOH = 100 µA with VDD = 7.2 V in overvoltage condition; output impedance 2-5 kΩ; abs max OUT-VSS = 30 V. |+| 7 | PWRPAD | power_in | Exposed thermal pad; must be soldered and connected to VSS on the PCB for proper electrical and thermal operation; RθJA = 186.4 °C/W. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Texas Instruments |+| Package | WSON-6-EP(2x2) |+| Category | Power Management (PMIC) |+| Pins | 7 |++## CAD (KiCad official)++- Symbol: `BQ294522DRVT`+- Footprint: `Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm`+- 3D model: WSON-6-EP(2x2) (KiCad packages3D, STEP)+- 3D model files: `bq294522drvt-etched.step` / `bq294522drvt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bq294522drvt.step` / `bq294522drvt.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/bq294522) (25 pp, sha256 `9a3e52a97d8e79bb`, retrieved 2026-09-27, tier: lcsc)+- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/bq294522drvt-datasheet.pdf)
page.jsonadded+152@@ -0,0 +1,152 @@+{+ "slug": "bq294522drvt",+ "version": "0.1.0",+ "type": "component",+ "description": "Texas Instruments Battery Management, WSON-6-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "power management (pmic)",+ "bq294522drvt",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "bq294522drvt.kicad_sym",+ "bq294522drvt.kicad_mod",+ "bq294522drvt.glb",+ "bq294522drvt.step",+ "bq294522drvt.lbr",+ "docs/hero.png",+ "docs/bq294522drvt-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html"+ ],+ "component": {+ "mpn": "BQ294522DRVT",+ "manufacturer": "Texas Instruments",+ "package": "WSON-6-EP(2x2)",+ "pin_count": 7,+ "category": "Power Management (PMIC)",+ "subcategory": "Battery Management",+ "datasheet": "https://www.ti.com/cn/lit/gpn/bq294522",+ "parts": {+ "symbol": "bq294522drvt.kicad_sym",+ "footprint": "bq294522drvt.kicad_mod",+ "model_3d": "bq294522drvt-etched.glb",+ "model_3d_plain": "bq294522drvt.glb",+ "model_3d_step": "bq294522drvt-etched.step",+ "model_3d_step_plain": "bq294522drvt.step",+ "lbr": "bq294522drvt.lbr"+ },+ "distributor_links": {+ "lcsc": "C2866517",+ "digikey": "296-29705-2-ND",+ "mouser": "595-BQ294522DRVT"+ },+ "distributor_check": {+ "checked_at": "2026-09-27T01:47:43Z",+ "source": "Component Ocean /api/assign-pns",+ "digikey": {+ "pn": "296-29705-2-ND",+ "status": "found",+ "lifecycle": "Active"+ },+ "mouser": {+ "pn": "595-BQ294522DRVT",+ "status": "found"+ }+ },+ "pins": [+ {+ "number": "1",+ "name": "V3",+ "type": "input",+ "description": "Analog sense input for the positive voltage of the third cell from the bottom of the stack; input leakage current ±0.1 µA max (0 °C to 60 °C), abs max V3-VSS = 30 V; for 2-series configuration, short to V2."+ },+ {+ "number": "2",+ "name": "V2",+ "type": "input",+ "description": "Analog sense input for the positive voltage of the second cell from the bottom of the stack; input leakage current ±0.1 µA max (0 °C to 60 °C), abs max V2-VSS = 30 V."+ },+ {+ "number": "3",+ "name": "VSS",+ "type": "power_in",+ "description": "IC ground; electrically connected to the negative terminal of the lowest cell in the stack; must be connected to PWRPAD on PCB for proper operation."+ },+ {+ "number": "4",+ "name": "V1",+ "type": "input",+ "description": "Analog sense input for the positive voltage of the lowest cell in the stack; input leakage current ±0.1 µA max (0 °C to 60 °C), abs max V1-VSS = 30 V."+ },+ {+ "number": "5",+ "name": "VDD",+ "type": "power_in",+ "description": "Unregulated power supply input for the IC; recommended operating range 3 V to 25 V, abs max VDD-VSS = 30 V; connect series resistor RVD (100 Ω-1 kΩ) and bypass capacitor CVD (0.1 µF) for noise filtering."+ },+ {+ "number": "6",+ "name": "OUT",+ "type": "output",+ "description": "Active-high analog output drive for gate of external N-channel FET; VOUT ≥ 6 V at IOH = 100 µA with VDD = 7.2 V in overvoltage condition; output impedance 2-5 kΩ; abs max OUT-VSS = 30 V."+ },+ {+ "number": "7",+ "name": "PWRPAD",+ "type": "power_in",+ "description": "Exposed thermal pad; must be soldered and connected to VSS on the PCB for proper electrical and thermal operation; RθJA = 186.4 °C/W."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.2",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.2",+ "primary_model": "claude-haiku-4-5-20251001",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-4-6",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "exposed pad 7 added from the footprint"+ ],+ "pages_sent": 25,+ "cost_usd": 0.2428,+ "at": "2026-09-27T01:47:27"+ },+ "datasheet": {+ "url": "https://www.ti.com/cn/lit/gpn/bq294522",+ "pages": 25,+ "sha256": "9a3e52a97d8e79bb",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 7,+ "described": 7,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}