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Set visibility: public

Ray ·0991e9b976 ·2mo ago ·parent c5d2900
1 file changed +17−14
page.json+17−14
@@ -38,13 +38,13 @@         "number": "2",         "name": "STAT",         "type": "output",-        "description": "Open-drain charge status indicator. Connect to pull-up rail via 10k\u03a9 resistor. LOW indicates charge in progress; HIGH indicates charge complete or charge disabled. Blinks at 1Hz when a fault occurs."+        "description": "Open-drain charge status indicator. Connect to pull-up rail via 10kΩ resistor. LOW indicates charge in progress; HIGH indicates charge complete or charge disabled. Blinks at 1Hz when a fault occurs."       },       {         "number": "3",         "name": "/CE",         "type": "input",-        "description": "Active-low charge enable. Battery charging is enabled when /CE is LOW. Internally pulled low via 900k\u03a9 resistor."+        "description": "Active-low charge enable. Battery charging is enabled when /CE is LOW. Internally pulled low via 900kΩ resistor."       },       {         "number": "4",@@ -62,7 +62,7 @@         "number": "6",         "name": "VSET",         "type": "input",-        "description": "Battery charge voltage limit. Resistor pull-down from VSET to GND sets regulation voltage: <18k\u03a9 (short) = 8.2V, 39k\u03a9 = 8.8V, 75k\u03a9 = 8.7V, >150k\u03a9 (floating) = 8.4V (all \u00b110%)."+        "description": "Battery charge voltage limit. Resistor pull-down from VSET to GND sets regulation voltage: <18kΩ (short) = 8.2V, 39kΩ = 8.8V, 75kΩ = 8.7V, >150kΩ (floating) = 8.4V (all ±10%)."       },       {         "number": "7",@@ -80,19 +80,19 @@         "number": "9",         "name": "/PG",         "type": "output",-        "description": "Open-drain active-low power good indicator. Connect to pull-up rail via 10k\u03a9 resistor. LOW indicates a good input source when VBUS is within VVBUS_OP (3.9V). Can sink more than IPOORSRC (30mA)."+        "description": "Open-drain active-low power good indicator. Connect to pull-up rail via 10kΩ resistor. LOW indicates a good input source when VBUS is within VVBUS_OP (3.9V). Can sink more than IPOORSRC (30mA)."       },       {         "number": "10",         "name": "ICHGSET",         "type": "input",-        "description": "Charge current limit. Resistor from ICHGSET to GND programs charge current in the range 30mA (114\u03a9) to 2.2A (8k\u03a9). Pre-charge/termination current is 1/10 of fast charge (min pre-charge 30mA, min termination 10mA). Short to GND = min 30mA; floating = disable charge."+        "description": "Charge current limit. Resistor from ICHGSET to GND programs charge current in the range 30mA (114Ω) to 2.2A (8kΩ). Pre-charge/termination current is 1/10 of fast charge (min pre-charge 30mA, min termination 10mA). Short to GND = min 30mA; floating = disable charge."       },       {         "number": "11",         "name": "REGN",         "type": "power_out",-        "description": "Gate drive supply. Bias supply for internal MOSFET drivers and IC. Bypass to GND with a 4.7\u00b5F ceramic capacitor. REGN current limit is 50mA."+        "description": "Gate drive supply. Bias supply for internal MOSFET drivers and IC. Bypass to GND with a 4.7µF ceramic capacitor. REGN current limit is 50mA."       },       {         "number": "12",@@ -104,25 +104,25 @@         "number": "13",         "name": "BAT",         "type": "power_out",-        "description": "Battery power connection. Connect minimum recommended 10\u00b5F (after derating) capacitance closely to BAT pin and GND."+        "description": "Battery power connection. Connect minimum recommended 10µF (after derating) capacitance closely to BAT pin and GND."       },       {         "number": "14",         "name": "BAT",         "type": "power_out",-        "description": "Battery power connection. Connect minimum recommended 10\u00b5F (after derating) capacitance closely to BAT pin and GND."+        "description": "Battery power connection. Connect minimum recommended 10µF (after derating) capacitance closely to BAT pin and GND."       },       {         "number": "15",         "name": "SYS",         "type": "power_out",-        "description": "System connection. Internal BATFET is between SYS and BAT. Switch-mode converter keeps SYS above minimum system voltage when battery is below that level. Connect 2x22\u00b5F (after derating) between SYS and PGND."+        "description": "System connection. Internal BATFET is between SYS and BAT. Switch-mode converter keeps SYS above minimum system voltage when battery is below that level. Connect 2x22µF (after derating) between SYS and PGND."       },       {         "number": "16",         "name": "SYS",         "type": "power_out",-        "description": "System connection. Internal BATFET is between SYS and BAT. Switch-mode converter keeps SYS above minimum system voltage when battery is below that level. Connect 2x22\u00b5F (after derating) between SYS and PGND."+        "description": "System connection. Internal BATFET is between SYS and BAT. Switch-mode converter keeps SYS above minimum system voltage when battery is below that level. Connect 2x22µF (after derating) between SYS and PGND."       },       {         "number": "17",@@ -152,19 +152,19 @@         "number": "21",         "name": "PMID",         "type": "power_in",-        "description": "Blocking MOSFET connection. Minimum recommended total input low-ESR capacitance on VBUS and PMID (after derating) is 10\u00b5F; at least 1\u00b5F on VBUS, remainder on PMID (typical 10\u00b5F)."+        "description": "Blocking MOSFET connection. Minimum recommended total input low-ESR capacitance on VBUS and PMID (after derating) is 10µF; at least 1µF on VBUS, remainder on PMID (typical 10µF)."       },       {         "number": "22",         "name": "PMID",         "type": "power_in",-        "description": "Blocking MOSFET connection. Minimum recommended total input low-ESR capacitance on VBUS and PMID (after derating) is 10\u00b5F; at least 1\u00b5F on VBUS, remainder on PMID (typical 10\u00b5F)."+        "description": "Blocking MOSFET connection. Minimum recommended total input low-ESR capacitance on VBUS and PMID (after derating) is 10µF; at least 1µF on VBUS, remainder on PMID (typical 10µF)."       },       {         "number": "23",         "name": "VBUS",         "type": "power_in",-        "description": "Input supply. Connected to the external DC supply (4.3V to 6.2V operating). Bypass VBUS to GND with at least 1\u00b5F ceramic capacitor placed as close to the IC as possible."+        "description": "Input supply. Connected to the external DC supply (4.3V to 6.2V operating). Bypass VBUS to GND with at least 1µF ceramic capacitor placed as close to the IC as possible."       },       {         "number": "24",@@ -244,5 +244,8 @@     "docs/bq25886rger-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file