component
BQ2205LYPWR
Public Made by Adomby adom
Texas Instruments SRAM, TSSOP-16. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+170−8@@ -1,13 +1,180 @@ {+ "schema_version": 1,+ "type": "component", "slug": "bq2205lypwr",+ "title": "BQ2205LYPWR",+ "brief": "Texas Instruments SRAM, TSSOP-16. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "Texas Instruments SRAM, TSSOP-16. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "memory", "bq2205lypwr" ],+ "component": {+ "mpn": "BQ2205LYPWR",+ "manufacturer": "Texas Instruments",+ "package": "TSSOP-16",+ "pin_count": 16,+ "category": "Memory",+ "subcategory": "SRAM",+ "datasheet": "https://www.ti.com/lit/ds/symlink/bq2205ly.pdf",+ "parts": {+ "symbol": "bq2205lypwr.kicad_sym",+ "footprint": "bq2205lypwr.kicad_mod",+ "model_3d": "bq2205lypwr.glb",+ "model_3d_step": "bq2205lypwr.step",+ "lbr": "bq2205lypwr.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "A",+ "type": "input",+ "description": "SRAM bank select input. Chooses which conditioned chip-enable output (CECON1 or CECON2) receives the CE input during power-valid operation. Typically tied to a high-order address line."+ },+ {+ "number": "2",+ "name": "NC",+ "type": "unconnected",+ "description": "No connect. Must be left floating."+ },+ {+ "number": "3",+ "name": "NC",+ "type": "unconnected",+ "description": "No connect. Must be left floating."+ },+ {+ "number": "4",+ "name": "VSS",+ "type": "power_in",+ "description": "Ground reference (0 V). All three VSS pins (4, 5, 8) should be tied to system ground; use a single-point ground technique to separate low-current small-signal ground from high-current supply ground."+ },+ {+ "number": "5",+ "name": "VSS",+ "type": "power_in",+ "description": "Ground reference (0 V). Tie to system ground together with pins 4 and 8."+ },+ {+ "number": "6",+ "name": "NC",+ "type": "unconnected",+ "description": "No connect. Must be left floating."+ },+ {+ "number": "7",+ "name": "NC",+ "type": "unconnected",+ "description": "No connect. Must be left floating."+ },+ {+ "number": "8",+ "name": "VSS",+ "type": "power_in",+ "description": "Ground reference (0 V). Tie to system ground together with pins 4 and 5."+ },+ {+ "number": "9",+ "name": "BCp",+ "type": "power_in",+ "description": "Backup battery cell input. Accepts a 3-V primary (non-rechargeable) lithium cell; VBC range 2.0 V to 4.0 V (absolute max 4.5 V wrt VSS). Sources VOUT when VCC drops below the switch-over threshold VSO. Typical backup current 50 nA (150 nA max)."+ },+ {+ "number": "10",+ "name": "CECON1",+ "type": "output",+ "description": "Conditioned chip-enable output 1 (active low). Drives CE of SRAM bank 1; forced inactive high during power-fail and for tCER after power-up. VOL 0.4 V at 2 mA, VOH 2.4 V at 0.5 mA."+ },+ {+ "number": "11",+ "name": "CE",+ "type": "input",+ "description": "Chip-enable input (active low) from the host processor. Passed through to CECON1 or CECON2 (selected by A) with less than 25 ns propagation delay when power is valid; blocked otherwise for write-protection."+ },+ {+ "number": "12",+ "name": "VCC",+ "type": "power_in",+ "description": "Main 3.3-V supply input (3.0 V to 3.6 V recommended, absolute max 6.0 V). Continuously monitored against VPFD (typ 2.9 V); power-fail below this threshold triggers write-protect and reset. Typical ICC 210 uA (500 uA max)."+ },+ {+ "number": "13",+ "name": "VOUT",+ "type": "power_out",+ "description": "Switched SRAM supply output. Sourced from VCC when power is valid (VCC-0.3 V at 80 mA) and from BCp during backup (VBC-0.3 V at 100 uA). Feeds the VCC pins of the external SRAM banks."+ },+ {+ "number": "14",+ "name": "CECON2",+ "type": "output",+ "description": "Conditioned chip-enable output 2 (active low). Drives CE of SRAM bank 2; forced inactive high during power-fail and for tCER after power-up. VOL 0.4 V at 2 mA, VOH 2.4 V at 0.5 mA."+ },+ {+ "number": "15",+ "name": "BW",+ "type": "output",+ "description": "Battery warning output, open-drain, active low. Latches the result of the battery-warning comparison (threshold 0.677 x VCC) after tCER on power-up; low indicates low battery. Requires an external pull-up to VCC. VOL 0.4 V at 1 mA."+ },+ {+ "number": "16",+ "name": "RST",+ "type": "output",+ "description": "Power-on/power-fail reset output to the system CPU, open-drain, active low. Held low while VCC < VPFD and for tRST (30-85 ms) after VCC returns above VPFD. External pull-up not to exceed 10 kohm when a push-button reset is used. VOL 0.4 V at 1 mA."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://www.ti.com/lit/ds/symlink/bq2205ly.pdf",+ "pages": 17,+ "sha256": "031dc3e4391ffd75",+ "source_tier": "mfr"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 16,+ "described": 16,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "Texas Instruments",+ "Package": "TSSOP-16",+ "Category": "Memory",+ "Pins": "16"+ }+ },+ "variants": [+ {+ "mpn": "BQ2205LYPWR",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "bq2205lypwr"+ ],+ "discovery_pitch": "BQ2205LYPWR (Texas Instruments) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +192,5 @@ "docs/bq2205lypwr-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }