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Set visibility: public

Ray ·2e343467fa · ·parent 69673c8
1 file changed +10−7
page.json+10−7
@@ -32,19 +32,19 @@         "number": "1",         "name": "BOOT",         "type": "passive",-        "description": "Bootstrap capacitor terminal for the high-side MOSFET gate driver. Connect a 0.1 \u00b5F bootstrap capacitor between BOOT and SW; the voltage on this capacitor is the gate drive voltage of the high-side MOSFET. Absolute max VBOOT: -0.3 to +45 V referenced to GND (\u0394VBOOT: -0.3 to +7 V)."+        "description": "Bootstrap capacitor terminal for the high-side MOSFET gate driver. Connect a 0.1 µF bootstrap capacitor between BOOT and SW; the voltage on this capacitor is the gate drive voltage of the high-side MOSFET. Absolute max VBOOT: -0.3 to +45 V referenced to GND (ΔVBOOT: -0.3 to +7 V)."       },       {         "number": "2",         "name": "VIN",         "type": "power_in",-        "description": "Power supply input for the switching regulator and internal control circuit. Operating range 7.0 V to 36 V (abs max 40 V). A 10 \u00b5F and 0.1 \u00b5F ceramic input capacitor combination is recommended."+        "description": "Power supply input for the switching regulator and internal control circuit. Operating range 7.0 V to 36 V (abs max 40 V). A 10 µF and 0.1 µF ceramic input capacitor combination is recommended."       },       {         "number": "3",         "name": "EN",         "type": "input",-        "description": "Enable input. Low level (\u22640.8 V) forces the device into shutdown; high level (\u22652.5 V) enables the device. Must be terminated (do not leave floating). Absolute max 40 V; typical IEN = 4.2 \u00b5A at VEN = 3 V."+        "description": "Enable input. Low level (≤0.8 V) forces the device into shutdown; high level (≥2.5 V) enables the device. Must be terminated (do not leave floating). Absolute max 40 V; typical IEN = 4.2 µA at VEN = 3 V."       },       {         "number": "4",@@ -56,13 +56,13 @@         "number": "5",         "name": "FB",         "type": "input",-        "description": "Inverting input of the gm error amplifier and feedback sense node. Reference voltage VFB = 1.000 V typ (0.990-1.010 V at TJ=25\u00b0C). Set the output voltage via an external resistor divider from VOUT to FB. Abs max -0.3 to +7 V."+        "description": "Inverting input of the gm error amplifier and feedback sense node. Reference voltage VFB = 1.000 V typ (0.990-1.010 V at TJ=25°C). Set the output voltage via an external resistor divider from VOUT to FB. Abs max -0.3 to +7 V."       },       {         "number": "6",         "name": "COMP",         "type": "output",-        "description": "Error amplifier output and PWM comparator input. Connect external RC phase-compensation components (typical 15 k\u03a9 + 6800 pF to AGND). Abs max -0.3 to +7 V."+        "description": "Error amplifier output and PWM comparator input. Connect external RC phase-compensation components (typical 15 kΩ + 6800 pF to AGND). Abs max -0.3 to +7 V."       },       {         "number": "7",@@ -74,7 +74,7 @@         "number": "8",         "name": "SW",         "type": "power_out",-        "description": "Switch node - source of the high-side MOSFET and drain of the low-side MOSFET. Connect the 0.1 \u00b5F bootstrap capacitor between SW and BOOT, and the external inductor (e.g. 10 \u00b5H) from SW to VOUT. Abs max -0.5 V to VIN+0.3 V."+        "description": "Switch node - source of the high-side MOSFET and drain of the low-side MOSFET. Connect the 0.1 µF bootstrap capacitor between SW and BOOT, and the external inductor (e.g. 10 µH) from SW to VOUT. Abs max -0.5 V to VIN+0.3 V."       },       {         "number": "9",@@ -150,5 +150,8 @@     "docs/bd9e303efj-lbe2-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file